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  • 1
    Electronic Resource
    Electronic Resource
    Dependence of the density of defects in the oxide on Czochralski silicon on its thickness (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1241-1245 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the density of defects in the oxide on Czochralski silicon substrates on its thickness is discussed quantitatively in terms of the shape and the size of the octahedral void defects. Oxide thinning at corners of the void defects may be a dominant factor in the oxide thickness dependence when oxide thickness is smaller than 50 nm. The size distribution (80–160 nm) of the void defects may be a dominant factor in the oxide thickness dependence when oxide thickness is larger than 50 nm. Model is presented to explain the mechanism of the two factors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368190
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  • 2
    Electronic Resource
    Electronic Resource
    Stress evaluation of radio-frequency-biased plasma-enhanced chemical vapor deposited silicon nitride films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3865-3870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress is evaluated for silicon nitride films prepared by rf-biased plasma-enhanced chemical vapor deposition. The total stress of the films shows a change from tensile to compressive with increasing applied rf bias during film deposition. The biaxial elastic moduli and linear thermal expansion coefficients of the silicon nitride films are determined by measuring the temperature dependence of the total stress of films deposited on two different substrate materials. Both the biaxial modulus and linear thermal expansion coefficient are dominantly related to film density. The intrinsic stress of the silicon nitride films calculated using these values is very close to the total stress. The intrinsic tensile stress originates from spontaneous densification during film growth, while the compressive stress results from incorporated atoms that are accelerated and implanted into the films by rf-bias induced plasma potential. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366618
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal dissociation process of hydrogen atoms in plasma-enhanced chemical vapor deposited silicon nitride films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5243-5247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing characteristics of plasma-enhanced chemical vapor deposited silicon nitride films have been evaluated. Annealing temperature dependence for N–hydrogen bonds decreases monotonically with increasing temperature, while that for Si–hydrogen bonds initially increases and then decreases. The annealing time dependence of the absorption coefficients indicate the N–hydrogen bonds have two bonding configurations: one dissociates from 400 °C, and the other above 600 °C. The dissociation of the weaker configuration follows the first-order reaction, and the estimated activation energy is about 0.45 eV. For the Si–hydrogen bonds, the increase of the absorption coefficient in the initial stage of annealing is due to the recombination of hydrogen released atoms from the N–hydrogen bonds with Si dangling bonds, which occurs because of the dense structures of the films. By subtracting out this increase due to the recombination reaction, it is found that the dissociation reaction for the Si–hydrogen bonds is also a first-order reaction, and the estimated activation energy is 0.60 eV. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368813
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen bonding configurations in silicon nitride films prepared by plasma-enhanced deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 484-489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen chemical bonding configurations in amorphous silicon nitride films prepared by plasma-enhanced chemical vapor deposition are determined for the first time. This is accomplished by measuring the difference spectra between the absorption spectrum of an annealed or a hydrogen implanted film and that of a reference film, mostly as-grown film. Three- and two-bonding configurations for Si-hydrogen and N-hydrogen bonds are separated and assigned to Si-H(2120 cm−1), Si-H2 and/or (Si-H2)n chains (2180 cm−1), Si-H3(2255 cm−1), N-H(3320 cm−1), and N-H2(3280 and 3345 cm−1), respectively. Si-H2 bonds are the most thermally stable and N-H2 bonds are more thermally stable than N-H bonds. It is found that N-H bonds form the hydrogen bonding in the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335650
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  • 5
    Electronic Resource
    Electronic Resource
    Drawing of single-crystal mats of linear polyethylene (1969)
    New York : Wiley-Blackwell
    Journal of Polymer Science Part A-2: Polymer Physics 7 (1969), S. 2029-2041 
    Details
    ISSN: 0449-2978
    Keywords: Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Drawing of single-crystal mats of linear polyethylene has been investigated. Drawing is possible at temperatures higher than about 90°C. The drawing is accompanied by distinct necking, with a large decrease in the thickness of the mat and a very high maximum draw ratio, sometimes over 30. The maximum draw ratio is approximately proportional to the thickness of the lamellae. This behavior strongly suggests the unfolding of chains during drawing. A change of orientation of crystal axes occurs before necking without change of lamellar orientation. The a axis orients in the drawing direction; the b axis orients perpendicular to the direction of drawing; and the chain axis tilts away from the thickness direction of the mat. The structure of films drawn from mats is characterized by a distinct double orientation of crystals. This biaxial orientation in the drawn films has a high degree of correlation with the orientation of crystal axes observed before necking, and suggests that necking takes place in such a way that the chain tilts gradually about the b axis and ultimately unfolds. The postulate of formation of transitory two-dimensional crystals in necking seems useful in explaining the double orientation in the drawn film. The orientation behavior of crystal axes observed before necking is not always similar to that observed in the deformation of a single crystal. The difference is thought to be due to the effect of forces induced by drawing that act in the direction normal to the lamellae within a mat.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pol.1969.160071205
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  • 6
    Electronic Resource
    Electronic Resource
    Melting behavior of drawn films from polyethylene single-crystal mats (1970)
    New York : Wiley-Blackwell
    Journal of Polymer Science Part A-2: Polymer Physics 8 (1970), S. 1865-1877 
    Details
    ISSN: 0449-2978
    Keywords: Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Drawing of mats of linear polyethylene single crystals prepared from dilute solution is possible at temperatures above about 90°C. The structure and properties of the drawn specimens are much different from those ordinary drawn bulk polymer. Drawn mats have been investigated by differential scanning calorimetry. The characteristic experimental results are: (a) a broad melting curve, (b) considerable superheating depending on the rate of heating, (c) constancy of the melting point and the heat of fusion with annealing, (d) deviation from the relation between the heat of fusion and the density obtained for the drawn bulk specimens, (e) appearance of two melting peaks in samples annealed at temperatures above about 130°C. These results imply that the structure of the drawn mat is characterized by a larger number of the tie chains connecting the neighboring crystals (the structure postulated in earlier papers) than is the case in ordinary drawn bulk polymer. It can be concluded that the transformation of a fringed micellar type of structure to the folded lamellar structure may be difficult during annealing unless crystals melt and then recrystallize during cooling.
    Additional Material: 15 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pol.1970.160081102
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  • 7
    Electronic Resource
    Electronic Resource
    Typical fiber structure (1969)
    New York : Wiley-Blackwell
    Journal of Polymer Science Part A-2: Polymer Physics 7 (1969), S. 1259-1274 
    Details
    ISSN: 0449-2978
    Keywords: Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Model fibers of polyethylene and nylon 6 were strained in the direction of the fiber axis and the internal deformation of the samples was studied by large-angle and small-angle x-ray diffraction. The compression of samples along the fiber axis was successfully carried out, and the results obtained by x-ray methods yielded more interesting information on the structure of the fibers than was obtained in extension. A model for the structure of the fiber was constructed on the basis of the results on compressed fibers. In this model, crystals are distributed in cylindrical symmetry around the fiber axis keeping a crystal axis tangential to circles in the section normal to the fiber axis. The characteristic crystal axis is the b axis in polyethylene and the a axis in nylon 6. The chain axis of the crystals varies in orientation with respect to the fiber axis. In compression of fibers with such a structure, the crystals rotate around the characteristic axis indicated above. In the case of nylon 6 fiber, only this simple rotation seems to occur, while additional changes occur in polyethylene fibers. However, the simple rotation predominates even in polyethylene fibers. This fiber structure is correlated with the structure of thin films of the materials. This similarity proves the existence of a common mechanism for the origin of the structure of fibers and films.
    Additional Material: 15 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pol.1969.160070706
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  • 8
    Electronic Resource
    Electronic Resource
    Properties and structures of films drawn from polyethylene single-crystal mats (1970)
    New York : Wiley-Blackwell
    Journal of Polymer Science Part A-2: Polymer Physics 8 (1970), S. 355-369 
    Details
    ISSN: 0449-2978
    Keywords: Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The properties and structures of polyethylene films drawn from mats of single crystals were investigated in comparison with films drawn from bulk polymer. The most important result obtained is that the structural reorganization stimulated by mechanical stress and annealing occurs with much greater difficulty in the mat-drawn film. The chief mechanical characteristics of the film are a very low extensibility and a very high modulus. Structural characteristics, such as the double-orientation of the crystalline region and the morphology of the crystals, do suffer no substantial changes during annealing at high temperatures. This stability of the structure can be related to the characteristic fine structure of the mat-drawn film in which there are a much larger number of tie chains, connecting neighboring crystals, than in the bulk-drawn specimen. Relaxation of the amorphous region and a notable increase in long spacing take place in the mat-drawn sample as in ordinary bulk-drawn samples. However, the morphological changes of the crystals accompanied by the folding back of chains seem to take place with great difficulty during annealing even in the vicinity of the melting point.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pol.1970.160080303
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  • 9
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    Thermal dissociation process of hydrogen atoms in plasma-enhanced chemical vapor deposited silicon nitride films (1998)
    American Institute of Physics
    Details
    Publication Date: 1998-11-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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  • 10
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    Increased cell response to zirconia ceramics by surface modification (2006)
    American Institute of Physics
    Details
    Publication Date: 2006-10-30
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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