Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 1361-1363
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial growth of CeO2(001) thin films on Si(001) substrates was achieved by electron beam evaporation. Reflection high-energy electron diffraction and cross-sectional high-resolution transmission electron microscopy established the formation of an epitaxial CeO2(001)/Si(001) structure with a cube-on-cube configuration. The epitaxial structure had to be formed at a temperature below 200 °C with a Si(001)-2×1, 1×2 reconstructed surface, and it could be formed even at room temperature. In order to improve the crystallinity, homoepitaxial growth conditions at a higher temperature with a high oxygen flow rate were also investigated. Homoepitaxy of ceria grown on a 5-nm-thick initial layer was demonstrated by θ/2θ-scan and φ-scan of x-ray diffraction. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1351849
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