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  • 1
    Electronic Resource
    Electronic Resource
    Time-dependent evolution of SiO2/Si interface traps after repeated radiation damage (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3317-3319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The post-irradiation evolution of the interface traps in metal/SiO2/Si (MOS) capacitors after repeated x-ray irradiation has been investigated. The results indicate that, immediately after the first irradiation, a characteristic peak (peak-1) in the energy distribution of the interface traps above midgap appears, which subsequently decreases with time in storage at 75 °C. Accompanying this decrease is the formation and growth of a second peak (peak-2) below midgap. Evidence will be presented which suggests that this is due to an interfacial defect transformation process. Measurements done after repeated irradiation-storage cycles indicate that peak-2 is not generated directly by the x-ray irradiation; rather, the existence of peak-1 is a necessary condition for the formation of peak-2 through the defect transformation process. There is also evidence that only a portion (although a significant portion) of peak-1 defect undergoes the transformation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341510
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  • 2
    Electronic Resource
    Electronic Resource
    Interface-trap transformation at radiation-damaged (111)Si/SiO2 interface (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2339-2341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents the results of our recent study on the post-irradiation behavior of the interface trap distribution in metal-SiO2-Si capacitors made on Si substrates of (111) orientation. It will be shown that the interface trap distribution in these (111) samples measured immediately after x-ray irradiation is qualitatively similar to what was observed in the (100) counterpart: a prominent peak appears in the upper half of the Si band gap (Ev+0.75 eV). Subsequent time-dependent evolution behavior of this peak, however, is distinctly different for samples with the two different orientations. While in (100) samples a second peak in the lower half of the band gap would develop over time, resulting in a double-peak interface trap distribution [see, for example, E. F. da Silva, Y. Nishioka, and T.-P. Ma, Appl. Phys. Lett. 51, 270 (1987)], the most salient feature observed in (111) samples is the gradual shift of the peak position with time toward the lower half of the Si band gap, and eventually a single peak will reside below midgap. The movement of this peak has been found to be thermally accelerated, with an apparent activation energy of about 0.4±0.1 eV. It has also been found that the gate-induced compressive strain at the Si/SiO2 interface plays an important role in the peak movement. In addition, the presence of a gate bias and its polarity also significantly affect the post-irradiation behavior of the interface trap distribution. The results may be explained in terms of the atomic relaxation of the bonding defect at the (111)Si/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101522
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  • 3
    Electronic Resource
    Electronic Resource
    Role of implantation-induced defects in surface-oriented diffusion of fluorine in silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3403-3409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Open-volume defects introduced in Si(100) crystals during fluorine implantation were investigated by variable-energy positron beam depth profiling. The behavior of the implantation-induced lattice defects upon high temperature annealing and their role in the surface-oriented diffusion of F impurities were examined. The defects become mobile and undergo recovery at temperatures below 550 °C, i.e., well before the onset of fluorine diffusion as seen by secondary ion mass spectroscopy (SIMS) profiling. This behavior suggests that after irradiation and annealing the fluorine occupies substitutional sites to which positrons are insensitive. The anomalous F diffusion seen in SIMS has been explained through a two-step diffusion mechanism, in which the diffusion kinetics is determined by dissociation of the substitutional F into an interstitial F and a vacancy, followed by a rapid diffusion of the interstitial F and the vacancy through the crystal to the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357470
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  • 4
    Electronic Resource
    Electronic Resource
    Interface traps in jet-vapor-deposited silicon nitride–silicon capacitors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8507-8511 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of interface traps in metal–silicon nitride (deposited by jet vapor deposition technique) –silicon (MNS) capacitors have been studied in some detail. In comparison with those in metal–oxide–Si capacitors, the interface traps in our MNS capacitors exhibit the following major differences: (i) ∼2 orders of magnitude higher time constants; (ii) no evidence of two distinguishable defects following irradiation as revealed by the ac conductance measurement; and (iii) absence of latent generation of interface traps following irradiation. On the other hand, the interface-trap transformation process following irradiation is qualitatively similar in silicon nitride and thermal oxide devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362529
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  • 5
    Electronic Resource
    Electronic Resource
    Radiation-induced enhancement of minority-carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2 with trichloroethane additive (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 592-594 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that the minority-carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2 with very small amounts (much smaller than typically used) of trichloroethane can be substantially enhanced by x-ray irradiation. The depth profile data showed that, immediately after irradiation, the lifetimes in a region close to the SiO2/Si interface would increase significantly while those in the deeper depletion region remained unchanged. Thereafter, the lifetimes throughout the region profiled (1–2 μm) would continuously change with time, and would eventually stabilize at a level much higher than that prior to irradiation. The time constant for lifetimes to reach steady state is typically 1–2 days at room temperature. These results will be explained in terms of the passivation of the generation-recombination centers in Si by liberated Cl after irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99866
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  • 6
    Electronic Resource
    Electronic Resource
    Interface traps at midgap during defect transformation in (100) Si/SiO2 (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1744-1746 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface traps generated by ionizing radiation or hot-electron injection undergo continuous changes with time after the damaging source is turned off. This letter focuses on the interfacial defect transformation process in (100) Si/SiO2, in which a large portion of the interface trap peak in the upper half of the Si band gap gradually converts into a second peak in the lower half of the band gap. It will be shown that, when the interfacial defect transformation process dominates, the interface trap density at midgap does not change with time, despite the fact that other portions of the interface traps undergo drastic changes. The time-dependent behavior of the midgap density provides a convenient indicator to determine whether the dominant process is defect transformation, annealing (the midgap density decreases with time), or latent generation (the midgap density increases with time).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99776
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  • 7
    Electronic Resource
    Electronic Resource
    Radiation and hot-electron effects on SiO2/Si interfaces with oxides grown in O2 containing small amounts of trichloroethane (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 573-575 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hardness of SiO2/Si structures grown in O2+TCA (1,1,1,-trichloroethane) to damages caused by ionizing radiation and hot-electron injection has been found to depend strongly on the amount of TCA introduced. Using minute amounts (much smaller than conventionally used) of TCA, we have been able to achieve a dramatic improvement of the hardness. When excess amounts of TCA are used, however, the hardness degrades. In addition, the use of TCA also causes a significant change in the gate size dependence of the radiation or hot-electron-induced interface traps. These results will be explained in terms of the effects of Cl on the interfacial strain near the SiO2/Si transition region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99397
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  • 8
    Electronic Resource
    Electronic Resource
    Energy shift of (100)Si/SiO2 interface traps resulting from avalanche hole injection (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1058-1060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influence of avalanche injected holes on Si/SiO2 interface traps is reported. The major effect of avalanche hole injection is to shift the energy distribution of the interface traps (Dit) toward the conduction-band edge. In addition, in x-ray irradiated samples where a double-peak Dit distribution had been formed, the energy distance between the two peaks decreases with increasing injected hole fluence. When the trapped holes are neutralized by electron injection, however, the Dit distribution recovers to its initial energy position prior to avalanche hole injection. If we assume the interface traps correspond to the Pb centers in the electron spin resonance literature, then the energy shift of Dit due to avalanche injected holes may arise from the local structural change of the Pb dangling bond defect−a shift toward conduction band is consistent with a more planar configuration of the tetrahedral structure of the Si dangling bond defect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350399
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  • 9
    Electronic Resource
    Electronic Resource
    Time evolution of capture cross sections of radiation-induced Si/SiO2 interface traps studied by single-frequency ac conductance technique (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 860-866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the time-dependent evolution of the capture cross sections of interface traps in metal/SiO2/Si capacitors after they are created by x-ray irradiation. A single-frequency ac conductance technique was used in this study. The capture cross section decreases significantly right after irradiation, and gradually recovers over a time scale similar to that of the interface-trap transformation process reported previously [T. P. Ma, Semicond. Sci. Technol. 4, 1061 (1989)]. The x-ray dose dependence and the effect of PMA (post-metal anneal) will also be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349649
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  • 10
    Electronic Resource
    Electronic Resource
    Time-dependent changes of parasitic effects induced by high-field electron injection in metal-oxide-semiconductor transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 528-530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The subthreshold characteristics of n-channel metal-oxide-semiconductor field effect transistors after high-field, high current density (100 mA/cm2) Fowler–Nordheim electron injection are investigated. Rapid changes are observed and recorded within 1000 s after injection. A "bump'' in the subthreshold I-V characteristic appears if electron trapping in the gate oxide dominates. This bump can be made to disappear and reappear by controlling the amount of trapped electrons in the oxide. This may be readily explained by the parasitic channel leakage current along the isolation field oxide edges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347700
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