ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A review is presented of the current understanding of the dislocation configurationsobserved in PVT-grown 4H- and 6H-SiC boules and CVD-grown 4H-SiC homoepitaxial layers. Inboth PVT-grown boules and CVD-grown epilayers, dislocation configurations are classifiedaccording to whether they are growth dislocations, i.e., formed during growth via the replication ofdislocations which thread the moving crystal growth front, or result from deformation processes(under either mechanical or electrical stress) immediately following growth, during post growthcooling, i.e., behind the crystal growth front or during device operation. Possible formationmechanisms of growth defects in the PVT grown boules, such as axial screw dislocations andthreading edge dislocation walls are proposed. Similarly, possible origins of growth defectconfigurations in CVD-grown epilayers, such as Frank faults bounded by Frank partials, BPDs andTEDs, are also discussed. In a similar way, the origins of BPD configurations resulting fromrelaxation of thermal stresses during post-growth cooling of the PVT boules are discussed. Finally,the susceptibility of BPD configurations replicated into CVD grown epilayers from the substratetowards Recombination Enhanced Dislocation Glide (REDG) is discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.261.pdf
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