ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Utilizing an very sensitive electron spin resonance (ESR) technique, spin dependent recombination (SDR) we have identified interface and near interface trapping centers in 4H and 6H SiC/SiO2 metal oxide semiconductor field effect transistors (MOSFETs). We extend our group’s earlier observations on 6H devices to the more technologically important 4H system and find that several centers can play important roles in limiting the performance of SiC basedMOSFETs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.593.pdf
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