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  • 1
    Electronic Resource
    Electronic Resource
    Low-frequency noise measurements on AlGaAs/GaAs resonant tunnel diodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1969-1971 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental apparatus and procedure using noise measurement techniques in order to identify conduction mechanisms in resonant tunnel diodes (RTDs) due to defect-assisted tunneling is developed. The theory of noise measurements is discussed as the basis for the appropriate modeling of RTD noise data. Nonlinear and linear algorithms are developed to model these data and simulation test results are presented. Equipment target specifications are outlined and a functional equipment setup and procedure are also discussed. Sample results of a RTD noise measurement and of a determination of activation energy and capture cross section are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102135
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  • 2
    Electronic Resource
    Electronic Resource
    On the different physical roles of hysteresis and intrinsic oscillations in resonant tunneling structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1515-1525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic sources based upon resonant tunneling diodes (RTDs) usually generate power by establishing limit cycles which exchange energy with storage elements in an external biasing circuit; hence, the output power in this type of implementation will always be limited by extrinsic effects. We verify the presence of multiple energy-storage mechanisms solely within the RTD and characterizes the interdependencies necessary to induce intrinsic oscillations observed in quantum mechanical simulations. Specifically, we show that a nonlinear "access'' resistance and quantum-well inductance is responsible for the hysteresis, "plateaulike'' behavior, and bistability associated with the intrinsic current–voltage (I–V) characteristic. Furthermore, a new circuit-level representation which accurately incorporates the nonlinear dependencies into these heretofore "linear'' equivalent-circuit elements is used to demonstrate the different roles, as well as the degree of cooperative interplay, of the intrinsic oscillations and hysteresis in determining the overall I–V characteristics of the RTD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360994
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  • 3
    Electronic Resource
    Electronic Resource
    Rechargeable E' centers in silicon-implanted SiO2 films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7359-7367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of Si in does of 1015–1016 cm−2 into dry thermal oxides on silicon wafers produces a three-state MOS memory device. For both positive- and negative-going traps, gate voltage stress up to ±10 MV/cm−1 generates stable (±) oxide charge near the gate and ((minus-plus)) charge near the substrate. Electron paramagnetic resonance (EPR) measurement on corona-field (≤11 MV/cm) stressed oxides reveals E' centers in regions of positive charge, which may be recycled between the EPR-visible (+) state and the invisible neutral state. The correspondence of charge and EPR indicates a composite or Feigl-Fowloer-Yip E' center, O3 3/4 Si:...+Si 3/4 O3, arising from nonstoichiometric Si fused into the SiO2 lattice. Upon trapping an electron, the center rebonds to yield O3 3/4 SiSi 3/4 O3. The charging parameters of the E' center suggest tunneling of an electron from the (0→+) state, and are consistent with the theoretical prediction of the energy level and Franck–Condon relaxation. The three types of E' centers observed in this and related studies are compared with the E'α, Eβ and E'γ variants of bulk amorphous silica.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346059
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  • 4
    Electronic Resource
    Electronic Resource
    Analysis of defect-assisted tunneling based on low-frequency noise measurements of resonant tunnel diodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 657-659 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of an experimental apparatus and procedure using noise measurement techniques to identify conduction mechanisms in resonant tunneling diodes due to defect-assisted tunneling are presented. The activation energies and capture cross sections of the traps are determined for each of three distinct levels detected. These values are in good agreement between the forward bias and inverted bias cases. A conjecture is made as to the physical location of the traps. This interpretation yields qualitative behavior consistent with the known bias and temperature dependence of the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101813
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  • 5
    Electronic Resource
    Electronic Resource
    Fermi level pinning in low-temperature molecular beam epitaxial GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1585-1587 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Fermi level position in low temperature (LT) GaAs has been studied by photoreflectance (PR). By etching the LT-GaAs to a different thickness, we find the Fermi level in the as-grown as well as the annealed LT-GaAs is firmly pinned. The pinning position, however, occurs at different energies: 0.47 eV below the conduction band edge for the as-grown samples and 0.65 eV below the conduction band edge for the annealed samples. The pinning in the as-grown LT-GaAs is believed to be the result of a high degree of charge compensation by deep levels, while the pinning in the annealed LT-GaAs is due to the depletion of carriers by the Schottky barrier at the metallic As precipitates. From the measured Fermi level and ionization ratio of As antisites, the (0/+) donor level of the As antisite in LT-GaAs is, for the first time, determined at Ec−0.57 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107504
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  • 6
    Electronic Resource
    Electronic Resource
    High pressure optical investigation of porous silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1435-1437 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed the first photoluminescence (PL) measurements under hydrostatic pressure up to 37 kbar at room temperature on several porous silicon (Si) samples fabricated under different etching conditions. A blue shift of the PL peak energy was observed in all samples from 0 to ∼20 kbar. Above ∼20 kbar, the PL peak energy appears to be constant or even to exhibit a small red shift with pressure in some samples. This pressure dependence of the PL peak energy of porous Si is different from the pressure induced red shift in the PL from the indirect band gap of the bulk Si crystal, or the red shift in the PL from amorphous Si. The intensity of the PL peaks showed a decrease with increasing pressure. We have also observed a red shift with time when a blue laser continuously illuminated the sample. These results on the pressure dependence of porous Si provide critical information for modeling and determining the electronic structure of porous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108466
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  • 7
    Electronic Resource
    Electronic Resource
    Back-gating effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2234-2236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (LT) photoluminescence (PL) measurements on pseudomorphic modulation-doped transistors with a (LT) GaAs layer in the GaAs substrate have revealed the existence of a substrate voltage. The substrate voltage is manifested by a decrease in the PL transition energies of the quantum-well subbands due to the quantum confined Stark effect. Our results indicate that the substrate voltage is generated by the trapping of holes from the undoped molecular-beam-epitaxy-grown GaAs at the GaAs/LT GaAs interface by the high concentration of arsenic antisite defects in the LT GaAs layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117138
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  • 8
    Electronic Resource
    Electronic Resource
    Microstructure of visibly luminescent porous silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2800-2802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of luminescent porous silicon, formed by electrochemical etching of silicon wafers has been characterized by cross-sectional high-resolution transmission electron microscopy. Results of this study reveal the structure to consist of Si crystallites. The crystallites are ∼3.5 nm in size and are randomly distributed throughout the porous Si region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106832
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  • 9
    Electronic Resource
    Electronic Resource
    Dynamics of photoreflectance from undoped GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 321-323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the time constants involved in photoreflectance from several GaAs surface-intrinsic-n+ structures. The rise and fall times were determined from digital oscilloscope traces. We find that they depend on the intensity and wavelength of the pump and probe beams. The observed photoreflectance feature does not always follow a single exponential decay. The dependence of rise and fall times on intensity and wavelength of pump and probe beams can be accounted for by a theory based on majority-carrier flow. The characteristic time obtained can be used to determine the potential barrier height.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105583
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  • 10
    Electronic Resource
    Electronic Resource
    Oxygen ion implanted germanium - structural properties
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 46 (1990), S. 409-412 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(90)90738-G
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