Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 1573-1575
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Optical properties of ordered Ga0.5In0.5P epitaxial layers grown by metalorganic vapor phase epitaxy are investigated by photoluminescence (PL) in a temperature range of 10–200 K using excitation power densities between 0.35 W/cm2 and 20 W/cm2. It is found that the intensity of the highest-energy PL peak of the ordered Ga0.5In0.5P epilayer decreases first, then increases and finally goes down again with increasing temperature. A model of ordered Ga0.5In0.5P epitaxial layers is proposed, in which the ordered Ga0.5In0.5P epilayer is regarded as a type-II quantum well structure with band-tail states, and the dependence of PL spectra on the temperature and excitation intensity is reasonably explained. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114943
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