Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2809-2811
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter, the stress-induced leakage current (SILC) is studied in N2O gate oxide. Compared to control thermal oxide grown in O2, N2O oxide shows suppressed SILC, and the suppression is more pronounced under substrate electron injection. Moreover, the dependence of SILC on stress current density is smaller for N2O oxide. The suppressed SILC in N2O oxide is attributed to the nitrogen incorporation during N2O oxidation, which reduces the electron trap generation rate and the density of weak oxide spots.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106835
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