Publication Date:
2012-04-15
Description:
Bismuth-based ferroelectric oxide films including BiFeO 3 , Bi 2 WO 6 and BiVO 4 with different band structure are prepared by pulsed laser deposition method and used as n-type semiconductors in photovoltaic devices. The oxide films are combined with p-type organic semiconductor poly(3-hexylthiophene) to form bilayer heterojunctions and their photovoltaic effects are systematically studied. Compared with some other oxide semiconductors, such as ZnO or TiO 2 , the bismuth-based oxides exhibit wider absorption spectra and can induce higher external quantum efficiency, open circuit voltage, and power conversion efficiency of the hybrid devices, indicating that bismuth-based oxides are promising materials for photovoltaic devices.
Print ISSN:
0002-7820
Electronic ISSN:
1551-2916
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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