ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The Current-Voltage-Temperature (I-V-T) characteristics of single layer deposition,consisting of Zr, Ti, or Cr/p-GaN Schottky diodes were determined in the temperature range 27-100oC. Sputtering method was used for deposition of these metals on p-GaN. Analysis of themeasured characteristics at room temperature allows the determination of the electrical parameters,the saturation current Io and the ideality factorη. The barrier heights and effective Richardsoncoefficients were determined through activation energy plot. It was found that pinning of Fermilevel occurred for these metal contacts on p-GaN with the carrier concentration of 5.6x 1017 cm-3,where the Schottky barrier heights of Zr, Ti, or Cr/p-GaN are determined to be in the same range(~0.87eV)
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.517.262.pdf
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