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  • 1
    Publication Date: 1991-08-01
    Print ISSN: 0261-3069
    Electronic ISSN: 1873-4197
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Elsevier
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  • 2
    Publication Date: 1998-03-01
    Print ISSN: 0924-4247
    Electronic ISSN: 1873-3069
    Topics: Electrical Engineering, Measurement and Control Technology
    Published by Elsevier
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  • 3
    Publication Date: 1996-03-01
    Print ISSN: 0924-0136
    Electronic ISSN: 1873-4774
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Elsevier
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  • 4
    Publication Date: 2011-08-24
    Description: The present electrical strain gage for high temperature static strain measurements is in its fine-wire and thin-film forms designed to be temperature-compensated on any substrate material. The gage element is of Pd-Cr alloy, while the compensator is of Pt. Because the thermally-induced apparent strain of this compensated wire strain gage is sufficiently small, with good reproducibility between thermal cycles to 800 C, output figures can be corrected within a reasonable margin of error.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Type: In: Annual Health Monitoring Conference for Space Propulsion Systems, 3rd, Cincinnati, OH, Nov. 13, 14, 1991, Proceedings (A93-16401 04-20); p. 391-400.
    Format: text
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  • 5
    Publication Date: 2011-08-19
    Description: A temperature compensated static strain gauge, which is fabricated from Pd13Cr alloy and a Pt compensator, is being developed and has been tested over a temperature range to 1500 F at NASA-Lewis. The PdCr compensated strain gage has significantly lower apparent strain to 500 F than other high temperature strain gages. The PdCr compensated gage is protected from oxidation by a flame-sprayed alumina-4 wt pct zirconia overcoating. Test Results to 1500 F indicate apparent strain variations of less than 250 micro-epsilon and reproducibility between thermal cycles within 50 micro-epsilon. The apparent strain of the coated PdCr compensated gage can be predicted and cancelled due to its reproducibility and low value.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Format: text
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  • 6
    Publication Date: 2013-08-31
    Description: An electrical resistance strain gage that can provide accurate static strain measurement to a temperature of 1500 F or above is being developed both in fine wire and thin film forms. The gage is designed to be temperature compensated on any substrate material. It has a dual element: the gage element is a special alloy, palladium-13wt percent chromium (PdCr), and the compensator element is platinum (Pt). Earlier results of a PdCr based wire gage indicated that the apparent strain of this gage can be minimized and the repeatability of the apparent strain can be improved by prestabilizing the gage on the substrate for a long period of time. However, this kind of prestabilization is not practical in many applications and therefore the development of a wire gage which is prestabilized before installation on the substrate is desirable. This paper will present our recent progress in the development of a prestabilized wire gage which can provide meaningful strain data for the first thermal cycle. A weldable PdCr gage is also being developed for field testing where conventional flame-spraying installation can not be applied. This weldable gage is narrower than a previously reported gage, thereby allowing the gage to be more resistant to buckling under compressive loads. Some preliminary results of a prestabilized wire gage flame-sprayed directly on IN100, an engine material, and a weldable gage spot-welded on IN100 and SCS-6/(beta)21-S Titanium Matrix Composite (TMC), a National Aero-Space Plane (NASP) structure material, will be reported. Progress on the development of a weldable thin film gage will also be addressed. The measurement technique and procedures and the lead wire effect will be discussed.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Type: NASA. Langley Research Center, The 1992 NASA Langley Measurement Technology Conference: Measurement Technology for Aerospace Applications in High-Temperature Environments; p 189-209
    Format: application/pdf
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  • 7
    Publication Date: 2019-06-28
    Description: Ceramic Matrix Composites (CMC) are being developed for use as enabling materials for advanced aeropropulsion engine and high speed civil transport applications. The characterization and testing of these advanced materials in hostile, high-temperature environments require accurate measurement of the material temperatures. Commonly used wire Thermo-Couples (TC) can not be attached to this ceramic based material via conventional spot-welding techniques. Attachment of wire TC's with commercially available ceramic cements fail to provide sufficient adhesion at high temperatures. While advanced thin film TC technology provides minimally intrusive surface temperature measurement and has good adhesion on the CMC, its fabrication requires sophisticated and expensive facilities and is very time consuming. In addition, the durability of lead wire attachments to both thin film TC's and the substrate materials requires further improvement. This paper presents a newly developed attachment technique for installation of free filament wire TC's with a unique convoluted design on ceramic based materials such as CMC's. Three CMC's (SiC/SiC CMC and alumina/alumina CMC) instrumented with type IC, R or S wire TC's were tested in a Mach 0.3 burner rig. The CMC temperatures measured from these wire TC's were compared to that from the facility pyrometer and thin film TC's. There was no sign of TC delamination even after several hours exposure to 1200 C. The test results proved that this new technique can successfully attach wire TC's on CMC's and provide temperature data in hostile environments. The sensor fabrication process is less expensive and requires very little time compared to that of the thin film TC's. The same installation technique/process can also be applied to attach lead wires for thin film sensor systems.
    Keywords: Instrumentation and Photography
    Type: NASA-TM-107488 , E-10785 , NAS 1.15:107488
    Format: application/pdf
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  • 8
    Publication Date: 2019-06-28
    Description: This report describes Government Work Package Task 29 (GWP29), whose purpose was to develop advanced strain gage technology in support of the National Aerospace Plane (NASP) Program. The focus was on advanced resistance strain gages with a temperature range from room temperature to 2000 F (1095 C) and on methods for reliably attaching these gages to the various materials anticipated for use in the NASP program. Because the NASP program required first-cycle data, the installed gages were not prestabilized or heat treated on the test coupons before first-cycle data were recorded. NASA Lewis Research Center, the lead center for GWP29, continued its development of the palladium-chromium gage; NASA Langley Research Center investigated a new concept gage using Kanthal A1; and the NASA Dryden Flight Research Center chose the well-known BCL-3 iron-chromium-aluminum gage. Each center then tested all three gages. The parameters investigated were apparent strain, drift strain, and gage factor as a function of temperature, plus gage size and survival rate over the test period. Although a significant effort was made to minimize the differences in test equipment between the three test sites (e.g., the same hardware and software were used for final data processing), the center employed different data acquisition systems and furnace configurations so that some inherent differences may be evident in the final results.
    Keywords: Instrumentation and Photography
    Type: NASA-TP-3540 , NAS 1.60:3540 , NASP-TM-1186 , E-9513
    Format: application/pdf
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  • 9
    Publication Date: 2018-06-05
    Description: There is strong interest in the development of silicon carbide-based monolithic ceramic and composite materials and components for demanding, high-temperature applications. Thorough characterization of material properties, including high-temperature testing under simulated or actual operating conditions, is a high priority for programs involved in developing these silicon carbide- (SiC) based materials and components. Members of the Sensors and Electronics Technology Branch at the NASA Lewis Research Center are developing minimally intrusive methods of measuring the properties (such as the surface temperature, strain, and heat flux characteristics) of components and subelements that are being tested or operated in hostile, high-temperature environments. Their primary goal is to instrument the test article or operating component with durable sensors that have a minimal effect on test conditions such as the gas flow across the surface of the item and the material response (including the through-thickness conduction of heat). Therefore, the main thrust of their work has been the development of thin-film sensors (e.g., thermocouples or strain gauges) for use on various advanced material test articles, including SiC/SiC composite components. There was a need for a better method of securing sensor lead wires on SiC-based components and subelements that would be tested at temperatures to 1000 C (or higher), to enhance the durability of the overall minimally intrusive sensor system. To address this need, Lewis researchers devised an alternative approach for positioning the sensor lead wires (which are connected to the thin-film sensors) on SiC or SiC/SiC components. A reaction-forming method of joining was used to strongly bond hoop-shaped monolithic SiC and SiC/SiC composite attachments of various sizes to both flat and curved surfaces of SiC/SiC composite subelements (see the photos). This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed at Lewis for the joining of SiC-based ceramics and fiber-reinforced composites.
    Keywords: Composite Materials
    Type: Research and Technology 1998; NASA/TM-1999-208815
    Format: application/pdf
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  • 10
    Publication Date: 2018-06-02
    Description: A ceramic- and thick-film-materials-based prototype electronic package designed for silicon carbide (SiC) high-temperature sensors and electronics has been successfully tested at 500 C in an oxygen-containing air environment for 500 hours. This package was designed, fabricated, assembled, and electronically evaluated at the NASA Glenn Research Center at Lewis Field with an in-house-fabricated SiC semiconductor test chip. High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as space missions to the inner solar system or the emission control electronics and sensors in aeronautical engines. Single-crystal SiC has such excellent physical and chemical material properties that SiC-based semiconductor electronics can operate at temperatures over 600 C, which is significantly higher than the limit for Si-based semiconductor devices. SiC semiconductor chips were recently demonstrated to be operable at temperatures as high as 600 C, but only in the probe station environment because suitable packaging technology for sensors and electronics at temperatures of 500 C and beyond did not exist. Thus, packaging technology for SiC-based sensors and electronics is immediately needed for both application and commercialization of high-temperature SiC sensors and electronics. In response to this need, researchers at Glenn designed, fabricated, and assembled a prototype electronic package for high-temperature electronics, sensors, and microelectromechanical systems (MEMS) using aluminum nitride (AlN) substrate and gold (Au) thick-film materials. This prototype package successfully survived a soak test at 500 C in air for 500 hours. Packaging components tested included thick-film high-temperature metallization, internal wire bonds, external lead bonds, and a SiC diode chip die-attachment. Each test loop, which was composed of thick-film printed wire, wire bond, and lead bond was subjected to a 50-mA direct current for 250 hours at 500 C.
    Keywords: Electronics and Electrical Engineering
    Type: Research and Technology 1999; NASA/TM-2000-209639
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