ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using silane-ammonia as the reactant gas mixture. The influence of the process parameters such as flow ratio of the reactant gases, pressure, substrate temperature, r.f. power, time of deposition and electrode spacing, on the deposition and etch rates were investigated and experimental results are presented.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00179225
Permalink