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  • 1
    Electronic Resource
    Electronic Resource
    AlGaAs/GaAs charge injection transistor/negative resistance field-effect transistor fabricated with shallow Pd/Ge ohmic contacts (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 306-308 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaAs/GaAs charge injection transistor (CHINT)/negative resistance field-effect transistor (NERFET) devices are fabricated with Pd/Ge ohmic contacts. Pd and Ge are deposited by e-beam evaporation. The contact metal layers are annealed by rapid thermal annealing at 450–500 °C for 1 min. This gives a shallow ohmic contact and low specific contact resistivity. The better ρc are on the order of 10−6 Ω cm2. Using Pd/Ge contacts and rapid thermal annealing method, the metallization of CHINT/NERFET becomes much less critical. Good device performance under NERFET mode and CHINT mode is achieved. The largest peak-to-valley ratio of NERFET is about 15 at room temperature. The process developed in this work considerably simplifies the fabrication of CHINT/NERFET devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111187
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  • 2
    Electronic Resource
    Electronic Resource
    Redistribution of constituent elements in Pd/Ge contacts to n-type GaAs using rapid thermal annealing (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1686-1690 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pd/Ge contact to n-type GaAs is performed by using electron-beam evaporation and rapid thermal annealing. The rapid thermal annealing is performed at 400–500 °C for various time durations. Low specific contact resistivity on the order of 10−6 Ω cm2 is obtained from measurements based on the transmission line model method. The contact depth profiles are analyzed by secondary ion mass spectrometry (SIMS). A very shallow ohmic contact is achieved. The redistribution of constituent elements after heat treatment is examined. A gallium SIMS signal bump is detected in the contact layer and is correlated with good ohmic contact behavior. A model based on Ga vacancies is proposed to explain this phenomenon. This shallow ohmic contact technology has been successfully utilized to fabricate GaAs/AlGaAs and GaAs/InGaAs/AlGaAs negative resistance field-effect transistors, for which shallow ohmic contact is critical.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357710
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  • 3
    Electronic Resource
    Electronic Resource
    Enhancement of electron transfer and negative differential resistance in GaAs-based real-space transfer devices by using strained InGaAs channel layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1965-1967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real-space transfer devices using strained InxGa1−xAs (x=0.15, 0.25) channel and unstrained GaAs channel are fabricated. The electron transfer and negative differential resistance of InGaAs channel devices are enhanced. The InGaAs channel devices with a larger indium mole fraction show lower leakage currents and can be operated at a higher collector voltage. For operation in the negative resistance field-effect transistor mode, the drain current peak-to-valley ratios of strained InGaAs channel devices are larger than that of unstrained GaAs channel devices. The peak-to-valley ratio can be increased more than two orders of magnitude by using strained InGaAs channel layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357657
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  • 4
    Electronic Resource
    Electronic Resource
    The temperature dependence of the transient current in ferroelectric Pb(ZrxTi1−x)O3 thin films for memory devices applications (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3478-3481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the transient current in ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) thin film capacitors is studied by examining the current density versus time (J-t) characteristics in the temperature range from room temperature to 140 °C. The transient current consists of two components, the conduction current and the polarization current. The conduction current is related to traps inside the films. The trapped holes cause an increase of the local electric field and hence the conduction current. The polarization current decreases and saturates as time increases. The dependence of the transient current on temperature therefore relies on the relative magnitudes of the two components. The transient current of PZT at room temperature is found to be dominated by trap-related conduction current at field higher than 83 kV/cm and by polarization current at field lower than 83 kV/cm. The increase of temperature enhances the emission rate of captured holes and the conduction current component decreases. The discharging current in the PZT capacitor is found to follow the tunneling front model in the temperature range below 100 °C, whereas a different model is required above 100 °C. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365664
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  • 5
    Electronic Resource
    Electronic Resource
    Optical characterization of real-space hot-electron transfer in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3607-3610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real-space transfer (RST) light-emitting transistors are implemented with a strained GaAs/InGaAs/GaAs quantum well heterostructure fabricated on GaAs substrates. The device energy band diagrams are simulated by using the MEDICI program. Two optical measurements, electroluminescence (EL) and photocurrent, are performed to characterize the RST light-emitting transistors. The RST of hot electrons into the active region is measured by EL at 77 K. The light emitted from the RST device is detected by a separate photodetector and the photocurrent is found to be consistent with the RST current-voltage (IC−VD) characteristics. The 77 K EL emission peak wavelength is about 9000 Å. The EL spectra confirm that the emission is dominated by emission from the GaAs/InGaAs/GaAs quantum well. At VD=0 V, the EL emission intensity due to hole leakage current is about 2 orders of magnitude lower than that of the electron leakage current. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365477
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  • 6
    Electronic Resource
    Electronic Resource
    Leakage currents in amorphous Ta2O5 thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6911-6915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum oxide (Ta2O5) is an important material for future dynamic random access memory application owing to its high dielectric constant. This work examines the structural and electrical properties of Ta2O5 thin films deposited by plasma-enhanced chemical vapor deposition using a penta ethoxy tantalum Ta(OC2H5)5 liquid source. The x-ray diffraction patterns indicate that the as-deposited thin films are amorphous and become polycrystalline after rapid thermal annealing above 650 °C. The level of carbon contamination is below that which can be detected by Auger electron spectroscopy measurement. Electrical measurements performed on amorphous Ta2O5 using a Au/Ta2O5/Pt/Ti/Si metal-tantalum oxide-metal structure exhibit a low leakage current, reasonable breakdown field (5.4 MV/cm), and high dielectric constant (23–25). The leakage current is 2×10−8 A/cm2 at 1 MV/cm. In addition, the leakage current mechanism of amorphous Ta2O5 capacitors is investigated by plotting the ln(J) vs E1/2 curves at a low electric field (〈2 MV/cm) and plotting ln(J/E) vs E1/2 curves at a high electric field (〉2 MV/cm). The dominant conduction mechanism is due to Schottky emission at low electrical field and Poole–Frenkel emission at high electrical field. According to our results, the Ta2O5 thin films annealed in N2 or O2 at 800 °C exhibit a much higher leakage current than amorphous Ta2O5 , possibly due to the out-diffusion of Ti during high temperature annealing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365252
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  • 7
    Electronic Resource
    Electronic Resource
    The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6921-6927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real-space transfer (RST) light-emitting devices are implemented with a strained GaAs/InGaAs/GaAs quantum well heterostructure fabricated on GaAs substrates. The device energy band diagrams are simulated by using the MEDICI program. The effects of critical thickness, quantum size, and strain-induced band-gap shift on the optical transition energies at 77 and 300 K are calculated. Photoluminescence (PL) measurement is carried out to characterize the RST light-emitting devices. The measured results agree well with calculated values. The narrowest full widths at half-maximum of PL spectra are measured to be 17 meV at 300 K and 9 meV at 77 K for an undoped GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure. The PL spectra confirm that the emission is dominated by emission from the strained GaAs/InGaAs/GaAs quantum well. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365254
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  • 8
    Electronic Resource
    Electronic Resource
    Atomic-layer epitaxy by a flux-interruption and annealing method and the analysis of reflection high-energy electron diffraction oscillation overshoot in the molecular-beam epitaxy growth of GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3291-3294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic-layer epitaxy is relatively rare in molecular-beam epitaxy (MBE). This is because the precise control of atomic layer deposition is difficult. Shutter mechanical delay and signal transit delay times are main reasons for the difficulty of precise control. A flux-interruption and annealing method has been used to grow atomic-layer epitaxy by MBE. Exact shutter action has been achieved to avoid an excess fractional layer and keep the reflection high-energy electron diffraction (RHEED) oscillation indefinitely. The RHEED oscillation profile, including the overshoot, has been studied as a function of substrate temperature and excess deposition of As4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352976
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  • 9
    Electronic Resource
    Electronic Resource
    The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1841-1843 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the current–voltage characteristics of Ba0.5Sr0.5TiO3 (BST) thin-film capacitors was studied from 300 to 433 K. An Au/BST/Pt/Ti/SiO2/Si structure was used. The BST films were deposited by rf magnetron sputtering. The conduction current was dominated by Schottky emission at room temperature and by Poole–Frenkel emission above 403 K. The dominant conduction mechanism changed from Schottky emission to Poole–Frenkel emission in the temperature range from 373 to 403 K. The BST/Pt and the BST/Au Schottky barrier heights were found to be 0.88 and 0.72 eV, respectively. The trap energy level in BST was 0.83 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372100
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  • 10
    Electronic Resource
    Electronic Resource
    Electron trapping process in ferroelectric lead–zirconate–titanate thin-film capacitors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 309-311 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of constant voltage stress on ferroelectric lead–zirconate–titanate (PZT) thin-film capacitors have been studied. Two stress effects are observed in the PZT capacitance–voltage (C–V) characteristics. The first is that the capacitance is reduced, and the second is a voltage shift of the C–V curve. These effects are found to depend on the stress electric field and the injected charge fluence. A correlation between the stress effects and the electron trapping inside the films is established. The injected charge fluence can be calculated from the leakage current. The trapping efficiency, electron capture cross section, and the trap density are obtained from the measured injected charge influence and the C–V voltage shift. The calculated value of the electron capture cross-section σT is 1.89×10−19 cm2 and the neutral electron trap density NT is 1.20×1013 cm−2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121818
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