ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Single and coupled δ-doped InP channel heterostructure field-effect transistors using high barrier height (〉0.73 eV) and wide energy band gap (∼1.8 eV) In0.34Al0.66As0.85Sb0.15 Schottky layer have been successfully grown by low-pressure metalorganic chemical vapor deposition. Comprehensive material characterizations have been conducted and investigated for various growth specifications, including the Hall measurement, secondary ion mass spectrometry, double crystal x-ray diffraction technique, and photoluminescence measurement. Excellent gate-source breakdown characteristics (〉40 V), low leakage current (111 μA/mm), improved gate voltage swing, improved carrier mobility, good saturation and pinch-off properties, and low output conductance (0.5 mS/mm) have been achieved by using the high barrier height In0.34Al0.66As0.85Sb0.15 Schottky layer and InP channels. The proposed structure provides good potential for high-power circuit applications. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1421631
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