ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
High power high efficiency silicon carbide RF MESFETs are fabricated using a novelstructure utilizing lateral epitaxy. The MESFET employs buried p-type depletion stoppers grown bylateral epitaxy with subsequent planarization. The depletion stopper is epitaxially overgrown by thechannel layer. The depletion stopper suppresses short channel effects and increases the operationvoltage and the RF signal gain at high voltage operation. High breakdown voltages of over 200Volts are achieved for single-cell components, however large-area transistors are limited to around150 Volts. Single-cell components measured on-wafer demonstrate an Ft of 10 GHz and highunilateral gain. Packaged 6-mm RF transistors in amplifier circuits feature a saturated power of 20W and a P1dB of 15W with a linear gain of over 16 dB at Vdd of 60 V for 2.25 GHz operation.Maximum drain efficiency is 56% for class AB operation, 48% at 1 dB compression point and 72%for class C at 2.25 GHz
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1231.pdf
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