Publication Date:
2012-06-16
Description:
Author(s): L. Schweidenback, T. Ali, A. H. Russ, J. R. Murphy, A. N. Cartwright, A. Petrou, C. H. Li, M. K. Yakes, G. Kioseoglou, B. T. Jonker, and A. Govorov The intensity of photoluminescence emission in InGaAs/GaAs quantum wells (QWs) exhibits local maxima as a function of magnetic field applied perpendicular to the QW plane at low temperatures. These maxima are attributed to the optical Aharonov-Bohm effect associated with spatially indirect excitons ... [Phys. Rev. B 85, 245310] Published Fri Jun 15, 2012
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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