ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
3C-(Si1-xC1-y)Gex+y ternary alloys were grown on 8.5° off axis 4H-SiC substrates by solidsource molecular beam epitaxy in a temperature range between 750°C and 950°C. Energy dispersiveX-ray (EDX) analysis revealed a decrease of the Ge incorporation versus substrate temperature. Thiseffect is due to the fixed Si/Ge ratio during the epitaxial growth. The Ge distribution within thegrown epitaxial layers was found to be nearly homogeneous. The investigations by atomic locationby channeling enhanced microanalysis allowed the conclusion that Ge is located mainly at Si latticesites
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1559.pdf
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