ISSN:
1432-0630
Keywords:
71.55
;
85.30
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Ion-implanted high ohmic resistors may exhibit a low temperature coefficient, if the annealing after implantation is not complete. This effect is explained by deep energy levels. Experimental results are presented for B+- and Al+-implanted resistors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00896337
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