ISSN:
1432-0630
Keywords:
81.60
;
82.60
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Chemical etching of single-crystal Si in an NF3 atmosphere is performed by continuous irradiation with an Ar+ laser at 514.5 nm. The etching process proves to be a thermally stimulated chemical reaction between solid Si and NF3 gas. The experimental results show how the depth and width of the etched grooves depend on laser power, scan speed, and gas pressure. The etch rates observed may exceed 25 μm/s.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00619719
Permalink