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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6060-6062 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The g factor and 4π Ms for epitaxially grown Fe16N2(001)/In0.2Ga0.8As(001) films have been investigated by ferromagnetic resonance along with Fe films for comparison. Angular dependence of the resonance fields in the film plane of Fe16N2 films had four-fold symmetry, which was attributed to the in-plane anisotropy. The g factor for Fe16N2 films was about 2.0, which means that the magnetic moment originates mainly from spin. Thus, nothing unusual is seen about the g factor. The g factor for Fe films was about 2.1, which is very similar to the value reported previously. 4πMs values for Fe16N2 and Fe films were 2.8×104 and 2.1×104 G, respectively, which agree well with the previous data obtained by a vibrating sample magnetometer. This confirmed that Fe16N2 has a giant magnetic moment. Torque magnetometer measurements showed that Fe16N2 films have a larger perpendicular anisotropy of 7.8×106 erg/cm3, which can originate from its bct structure.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3470-3472 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe/Ag multilayer films were prepared by rf-magnetron sputtering and ultrahigh-vacuum (UHV) depositions. The Ag layer thickness dAg was 2 nm constant, and the Fe layer thickness dFe was changed from 1 to 40 nm. The relationships between film structures and magnetic properties were investigated. The periodicity of multilayer films by UHV deposition is superior to that of sputtered films. The crystal orientation of sputtered films is Fe(110)(parallel)Ag(111) for dFe less than 7.3 nm, and Fe(110)(parallel)Ag(200) for dFe more than 14.7 nm. The critical thickness of dFe corresponds to the continuity of the Fe layer. When the crystal orientation is Fe(110)(parallel)Ag(200), the saturation magnetic flux density Bs(T) is about 2.1 T, and the coercive force Hc is less than 2 Oe. When the films are Fe(110)(parallel)Ag(111), Bs sharply decreases and Hc increases with decreasing dFe. The crystal orientation of UHV deposition films is Fe(110)(parallel)Ag(200) in the range of dFe=2–40 nm. Bs of UHV deposition films is about 2.0 T constant and Hc decreases with decreasing dFe.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4311-4313 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe and Cu single-layered films and Fe/Cu multilayered films were prepared by an rf-magnetron sputtering method, and the film structures and magnetic properties were investigated. Fe and Cu single-layered films become continuous when their thickness is more than 4 nm for Fe and 10 nm for Cu. The crystal structure of Fe/Cu multilayered films depends on the thickness or continuity of Fe and Cu layers. A Fe 1.6 nm/Cu 2 nm multilayered film has a periodic structure. As the thickness of the Fe layer decreases, the magnetic flux density and coercivity decrease and the magnetostriction constant changes from negative to positive. Uniaxial magnetic anisotropy in the plane of the multilayered Fe/Cu films is observed when the Fe layer is discontinuous, but it is not clearly observed for a continuous Fe film.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal Fe16N2 films have been grown epitaxially on Fe(001)/InGaAs(001) and InGaAs(001) substrates by molecular beam epitaxy (MBE). Saturation flux density Bs of Fe16N2 films has been demonstrated to be 2.8–3.0 T at room temperature, which is very close to the value obtained by Kim and Takahashi using polycrystalline evaporated Fe–N films. Temperature dependence of Bs has been measured. Bs changed with temperature reversibly up to 400 °C, while beyond 400 °C, Bs decreased irreversibly. X-ray diffraction showed that Fe16N2 crystal is stable up to 400 °C, while beyond 400 °C, Fe16N2 dissolves into Fe and Fe4N, and also some chemical reactions between Fe16N2 and the substrate occurs. This caused the temperature dependence of Bs mentioned above. From the temperature dependence of Bs up to 400 °C, the Curie temperature of Fe16N2 is estimated to be around 540 °C by using the Langevin function. The above mentioned Bs of 2.9 T at room temperature and 3.2 T at −268 °C corresponded to an average magnetic moment of 3.2μB per Fe atom and 3.5μB, respectively. These values of the magnetic moment of Fe atoms are literally giant, far beyond the Slater–Pauling curves. The origin of the giant magnetic moment has been discussed based on the calculation carried out by Sakuma. However, there was a significant disagreement between experimental values and calculated ones, so the origin remained to be clarified. Also, magneto-crystalline anisotropy of Fe16N2 films has been investigated.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4893-4893 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly sensitive magnetoresistive heads are required for magnetic disk drives with large areal density. Films with large anisotropic magnetoresistance are among the promising candidates for this purpose. In this work, the effect of third elements, X (Au, Pt, Ag, Cu, Pd, Co, Ru, ZrO2), to Ni80Fe20 alloy on anisotropic magnetoresistivity (Δρ) and other magnetic properties is examined with varying third element composition. Ternary films were deposited by rf sputtering on Ta seed layers. The thicknesses of ternary films were 5–20 nm which were determined by the x-ray reflectivity method. The value of Δρ for ternary films increases when Au, Pt, Ag, Co, and ZrO2 are added. On the other hand, Δρ decreases when Ru is added. Considering the application for the magnetoresistive (MR) head, low ρ0, low Hk, and low Bs are required except for large Δρ. The value of Δρ for Ni74Fe19Au7 film with the thickness of 10 nm is 0.65 μΩ cm which is 20% larger than that for Ni80Fe20. The values of Hk, λ, and Bs for Ni74Fe19Au7 are 4.8 Oe, 1×10−7, and 0.92 T, respectively. Therefore, NiFeAu ternary films are suitable for the MR head. Relative output for the Ni74Fe19Au7 head, calculated by an equation using the above results, is 23% larger than that for the Ni80Fe20 head. Furthermore, the higher output was confirmed by evaluation of fabricated heads. ©1997 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1493-1498 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anomalous and ordinary Hall resistivities for Fe16N2 (saturation magnetization 4πMs: 29 kG at room temperature) and Fe–N martensite (24.8 kG) films have been measured in the temperature range from 30 to 300 K and compared with pure Fe (21 kG) films. All films were epitaxially grown on GaAs(001) substrates by molecular beam epitaxy. The saturation anomalous Hall resistivity ρAS for Fe16N2 at 300 K was 4.0×10−7 V cm/A which was much higher than the values for Fe–N martensite (1.9×10−7 V cm/A) and Fe (1.5×10−7 V cm/A). Also the anomalous Hall constant RA at 300 K for Fe16N2 was 1.5×10−11 V cm/A G, which was much higher than the values for Fe–N martensite (0.8×10−11 V cm/A G) and Fe (0.7×10−11 V cm/A G). Such results are consistent with a much larger magnetic moment for Fe16N2. To investigate the consequences of the giant magnetic moment for Fe16N2 as compared with Fe–N martensite and Fe, the temperature dependences of ρAS and RA were measured. The values of ρAS and RA decreased monotonically with decreasing temperature for Fe16N2, Fe–N martensite and Fe. In the temperature range from 30 to 300 K, the ρAS value for Fe16N2 was much higher than the values for Fe–N martensite and Fe. This originated from the larger thermal fluctuation of the magnetization for Fe16N2. The striking features of Fe16N2 magnetism were its giant magnetic moment and its large thermal fluctuation of the magnetic moment. The electrical resistivity at room temperature for Fe16N2 was around 30 μΩ cm as compared with 10 μΩ cm for Fe. The difference was due mainly to the difference in the residual resistivities. The electrical resistivity for Fe16N2 decreased monotonically with decreasing temperature, which is normal for a metallic material. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Microelectronic Engineering 6 (1987), S. 343-348 
    ISSN: 0167-9317
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Microelectronic Engineering 6 (1987), S. 447-452 
    ISSN: 0167-9317
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Microelectronic Engineering 9 (1989), S. 285-288 
    ISSN: 0167-9317
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica D: Nonlinear Phenomena 24 (1987), S. 97-124 
    ISSN: 0167-2789
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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