Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1553-1555
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The mechanism for growth of single-crystal GaN on oxidized AlAs (AlOx) formed on a Si(111) substrate by metalorganic chemical vapor deposition has been studied. Cross-sectional transmission electron microscopy (XTEM) indicates that the grown GaN is single-crystal α-GaN in spite of the fact that the AlOx on which the GaN is grown is found to contain predominantly polycrystal γ-Al2O3. Reflection high-energy electron diffraction (RHEED) shows that oriented crystallized α-Ga2O3 is formed between AlOx and the GaAs cap layer during the oxidation process. The α-Ga2O3 acts as a growth template and results in the crystalline orientation of α-GaN on polycrystal γ-Al2O3. Further support for this template is derived from energy dispersive x-ray spectroscopy that shows the existence of Ga atoms on AlOx. Combined XTEM/RHEED analysis suggests that α-GaN is oriented in the growth direction as [0001]α-GaN(parallel)[0001]α-Ga2O3(parallel)[111]Si and the in-plane direction as [2110]α-GaN(parallel)[11(underbar)00]α-Ga2O3(parallel)[011(underbar)]Si, which can be understood by considering the misfit in the in-plane atomic separation at each interface. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122218
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