ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Evolution of Au-GaAs (001) interface structures with increasing Au exposure was studied. This study utilized photoelectron spectroscopy, electron diffraction, and He-ion Rutherford backscattering spectrometry. This was accomplished with the aid of molecular-beam epitaxy for surface preparation. The thermal stability of Au-GaAs (001) interfaces are presented in the following paper [N. Watanabe, K. L. I. Kobayashi, T. Narusawa, and H. Nakashima, J. Appl. Phys. 58, 3766 (1985)]. New phenomena were observed on overlayer growth, electronic structure change, and Schottky barrier formation. The present results apparently differ from previous Au-GaAs (110) system results; however, they support the surface defect model for Schottky barrier formation by W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and P. Chye [Phys. Rev. Lett. 44, 420 (1980)].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336290
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