Publication Date:
2015-09-23
Description:
Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm 2 /V s with good stability under a negative bias stress in InWZnO thin film transistors.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
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