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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence and electrical properties of erbium-doped indium oxide films prepared by rf sputtering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8209-8211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium-doped indium oxide films were prepared by rf magnetron sputtering. The Er-doped oxide films are conducting (or semiconducting) with a resistivity in the range of 10−3–103 Ω cm, and are optically active, i.e., show a clear room-temperature photoluminescence at 1.54 μm, corresponding to intratransitions in Er3+ ions. Compared with the undoped indium oxide films, the erbium doping was found to have the effect of increasing the resistivity (up to two orders of magnitude) of the films, mainly via a reduction of carrier concentration. Postdeposition annealing in air ambient significantly enhances both the Er3+ luminescence and Hall mobility (up to 60 cm2/V s), and reduces the carrier concentration. Postdeposition annealing in reducing ambient (N2/H2), however, decreases the resistivity dramatically, mainly via an increase of carrier concentration (up to 1020 cm−3), and also enhances the Er3+ luminescence. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357882
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  • 2
    Electronic Resource
    Electronic Resource
    Lead–zirconate–titanate-based metal/ferroelectric/insulator/semiconductor structure for nonvolatile memories (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5985-5996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the structural and electrical properties of the metal/ferroelectric/insulator/semiconductor (MFIS) structure that incorporates a MgO/SiO2 insulating buffer between a ferroelectric layer and Si substrate. Highly oriented lead–zirconate–titanate [Pb(Zr,Ti)O3, or PZT] films were grown on the MgO-buffered oxidized silicon substrates with a rf magnetron sputtering technique. The x-ray diffraction and energy-dispersive x-ray spectroscopy analysis results show that a MgO buffer serves well not only as a template layer for growing oriented PZT films on an amorphous surface but also as a diffusion barrier between PZT and Si substrates. The memory window of the MFIS structure was characterized with a capacitance-versus-voltage method. Numerical analyses were also carried out to simulate the MFIS capacitor characteristics. In this simulation, the PZT films were assumed to have a two-layer structure in which the dielectric and ferroelectric properties of an initial layer are significantly weaker than those of the main layer part. By comparing the measurement data with the simulation result, we have extracted the parameters of this two-layer model (dielectric constant and the polarization-versus-electric-field characteristics) of the PZT films in the MFIS structure. The scalability of the memory window of the MFIS structure was investigated by varying the ferroelectric (PZT) layer thickness. Both the experimental and simulation results show that the PZT-based MFIS structure is suitable for nonvolatile memory field-effect transistors with low-voltage requirement (3 V or less) and large memory window (1–2 V). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465504
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  • 3
    Electronic Resource
    Electronic Resource
    Thin-film-induced index change and channel waveguiding in epitaxial GaN films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1747-1749 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical waveguiding in the channel region of an epitaxial GaN film defined by a SiN cladding layer of a stripe window pattern. We carried out numerical analyses on the various possible effects that might contribute to the overcompensation of the negative loading effect of a SiN cladding window. This includes the photoelastic, piezoelectric, and electro-optic effects in GaN induced by a SiN window layer. The analysis result suggests that the observed phenomenon can be ascribed to a combination of both the photoelastic and electro-optic effects, and especially that the spontaneous polarization field in undoped GaN with a low background carrier concentration might play an important role in forming a channel waveguide in the window region. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311315
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  • 4
    Electronic Resource
    Electronic Resource
    Stress-induced lateral confinement of light in epitaxial BaTiO3 films grown by radio-frequency magnetron sputtering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1017-1019 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report channel waveguides formed in epitaxial BaTiO3 films that were grown on MgO single-crystal substrates using rf magnetron sputtering. In the channel waveguides developed, the lateral confinement of light is achieved via the photoelastic and piezoelectric/electro-optic effects in BaTiO3 induced by thin-film stress. Numerical analyses were also carried out on the stress and piezoelectric field distributions in the channel structure, assuming bulk materials properties. The refractive index changes were then calculated taking into account both the photoelastic and electro-optic effects of BaTiO3. The simulation result suggests that the electro-optic effect (caused by the stress-induced piezoelectric field) accounts for a significant portion (∼10%) of the refractive index change in the channel region. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122070
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  • 5
    Electronic Resource
    Electronic Resource
    Strain-induced channel waveguiding in bulk sapphire substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2693-2695 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the two-dimensional confinement of light in the channel region of a bulk sapphire substrate, which was formed by utilizing the photoelastic effect in sapphire induced by a sputter-deposited SiO2 film. The experimental result, combined with the simulation results, shows that the sputter-deposited SiO2 films are compressively stressed up to 10 GPa level and that a 1.0-μm-thick film, for example, induces an index change of 5×10−3 in sapphire in the vertical direction. This amount of index change is found sufficient to support a fundamental mode at wavelengths of 1.54 μm or below. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413221
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1511-1513 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on epitaxial growth of ZnO films on Si(111) substrates using an epitaxial GaN buffer layer. A rf magnetron sputtering process has been developed and utilized in growing epitaxial GaN buffers on Si, and then ZnO films on the GaN-buffered Si substrates. X-ray diffraction analysis shows that both the ZnO and GaN films are of a monocrystalline wurtzite structure with an epitaxial relationship of ZnO[0001]//GaN[0001]//Si[111] along the growth direction and ZnO[112(underbar)01]//GaN[112(underbar)0]//Si[11(underbar)0] along the in-plane direction. The successful growth of epitaxial ZnO/GaN films on Si demonstrates the feasibility and promise of integrating various functional devices on the same substrate. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355296
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3941-3943 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown highly oriented lead zirconate titanate [Pb(Zr, Ti)O3 or PZT] films on oxidized silicon substrates using a thin MgO buffer layer (7–70 nm thick). Ferroelectric nonvolatile memory field-effect transistors (FETs) were successfully fabricated using the metal/PZT/MgO/SiO2/Si structure in conjunction with radio-frequency sputter deposition of PZT and MgO films. The fabricated devices show excellent performance in ferroelectric polarization switching and memory retention. The results indicate that a thin MgO buffer serves well not only as a template layer for the growth of oriented PZT films on amorphous substrates, but also as a diffusion barrier between a ferroelectric and a substrate during device fabrication, protecting the SiO2/Si interface and the FET channel region. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122943
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  • 8
    Electronic Resource
    Electronic Resource
    Thermally stable ZnO films deposited on GaAs substrates with a SiO2 thin buffer layer (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2524-2526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 thin films (1000-A(ring) thick) were sputter deposited on GaAs substrates as a buffer layer in order to alleviate a thermal mismatching problem between ZnO films and GaAs substrates. Thermal stability of sputter-deposited ZnO films (0.5–2.0 μm thick) was tested on such a buffered GaAs substrate with a postdeposition heat treatment at 430 °C for 10 min, which is similar to a standard ohmic contact alloying condition. The films sustained the heat treatment well, not showing any crumbling, which has usually been a problem when a ZnO film is deposited directly on a GaAs substrate. The postdeposition anneal treatment also dramatically enhances c-axis orientation of the ZnO films and relieves intrinsic stress almost completely. These improvements are attributed to a reduction of grain boundaries and voids with the anneal treatment as supported by the scanning electron microscopy and x-ray diffraction measurement results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108169
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  • 9
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    Stress-induced lateral confinement of light in epitaxial BaTiO3 films grown by radio-frequency magnetron sputtering (1998)
    American Institute of Physics
    Details
    Publication Date: 1998-08-24
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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  • 10
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    Strain-induced channel waveguiding in bulk sapphire substrates (2001)
    American Institute of Physics
    Details
    Publication Date: 2001-10-22
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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