ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The atomic hydrogen-assisted molecular beam epitaxy (H-MBE) technique has been applied to fabricate multi-quantum-well (MQW) based compound semiconductor solar cells. A number of different InGaAs/GaAs MQW structures were inserted within the photon absorption region of a p–i–n GaAs junction diode. The spectral response characteristics of each device with varying number, thickness, and In composition of MQWs were measured and analyzed to investigate the effects of atomic H on the device performance. In the photon wavelength region of 800–1000 nm, the spectral response of H-MBE-grown cells was increased by 〉25% for the GaAs homojunction control cell, and by as much as ∼35% for a 10-period MQW cell (In0.07Ga0.93As: GaAs=50 nm:50 nm) as compared to the conventionally MBE-grown cells with identical layer structures. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.371603
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