ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A full description is presented of the "average bond energy model,'' which was developed for the determination of valence-band offset at heterojunctions. It is shown that this model is related conceptually to Harrison's tight binding "pinned'' model, while it overcomes all of the shortcomings of the latter. Its final form turns out to be a generalization of Cardona's dielectric-midgap-energy model. The average bond energy model is also shown related to Tersoff's charge-neutrality-point model. In this article, this model is used in conjunction with a cluster expansion method to determine systematically the valence-band offsets at four strained alloy type heterointerfaces, Si,Ge,InP,GaAs/GexSi1−x as functions of the alloy composition x. Good agreement is found between our results and available experimental data. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362896
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