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  • 1
    Electronic Resource
    Electronic Resource
    Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 803-806 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The electrical characteristics of a SiC-MESFET are affected by the channel structurecharacteristics, such as impurity density and thickness. MESFETs fabricated with ion implantationtechnique, can form thinner and higher doped channel layers than those fabricated with conventionalepitaxial growth, thus improve RF characteristics of MESFETs. We calculated the doping profile ofthe channel layer for an ion implanted SiC-MESFET using a simulator and then fabricated aSiC-MESFET with the same doping profile as obtained from the simulation. The ion implantedSiC-MESFET operated successfully and had the same electrical characteristics as the epitaxialSiC-MESFET. We demonstrated the effectiveness of one-step implantation channel layer for the ionimplanted SiC-MESFET
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.803.pdf
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 1107-1110 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We fabricated a 0.5-μm-gate MESFET on a bulk 4H-SiC semi-insulating substrate usingion implantation for the channel and contact regions. Our device design used a thin, highly dopedchannel layer, which was implanted at single energy to improve the device’s RF characteristics. Theelectrical characteristics of the ion-implanted MESFET annealed at 1700°C were better than those ofthe ion-implanted MESFET annealed at 1300°C. The fabricated ion-implanted MESFET has amaximum transconductance of 32.8 mS/mm and an fT/fmax of 9.1/26.2 GHz. The saturated outputpower was 26.2 dBm (2.1 W/mm) at 2 GHz. These values were the same as those of the conventionalepitaxial MESFET with a recessed gate
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1107.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1235-1238 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We fabricated a 0.5-μm gate MESFET on a bulk semi-insulating 4H-SiC substrate byusing ion implantation for the channel layer and contact region. Nitrogen ions were implanted toobtain a 0.25-μm-thick box-shaped profile with a doping density of 3.0×1017/cm3 for the channelregion and to obtain a 0.2-μm-thick box-shaped profile with a doping density of 2.0×1020/cm3 forthe contact region. Activation annealing is done in argon ambient at 1300 ℃ for 30 minutes. A 0.5-μm gate MESFET with 100-μm gate width showed a cut-off frequency of 7.5 GHz and a maximumoscillation frequency of 22.2 GHz. And its saturated output power was 25 dBm (3.16 W/mm), powergain was 6.7 dB and PAE was 15.7%
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1235.pdf
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  • 4
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    Tidal Response in Shallow Tectonic Tremors (2017)
    American Geophysical Union
    Details
    Publication Date: 2017-10-13
    Description: Various types of slow earthquakes (e.g., tectonic tremors and slow slip events) have been reported in tectonic zones, especially in the subduction zone. The tidal response of a tremor is considered to be strongly related to the weak friction state of the plate interface, and many studies have reported observational evidence of such correlation between tides and deep tremor activity. Here we used the modified frequency scanning method at a single station to detect micro tectonic tremors that have not been previously reported in southern Kyushu. In the early stage of the tremor activity, tremors are mostly modulated by slow slip events. In contrast, we found a seismic response to ocean tides during the later stage in the shallower part of the subduction zone. This might indicate that the tremors are triggered by tidal changes caused by fault weakening due to slow slip events as same as deeper condition. ©2017. American Geophysical Union. All Rights Reserved.
    Print ISSN: 0094-8276
    Electronic ISSN: 1944-8007
    Topics: Geosciences , Physics
    Published by American Geophysical Union
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  • 5
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    Utilization of amplitude values from seismic waveforms recorded by DAS along a bullet train (2023)
    In:  XXVIII General Assembly of the International Union of Geodesy and Geophysics (IUGG)
    Details
    Publication Date: 2023-07-04
    Description: Distributed acoustic sensing (DAS) allows for the deployment of a few tens of meters of seismometers along the length of the optical fiber cable. However, the data obtained from DAS, particularly amplitude information, can vary based on the installation environment of the optical fiber cables. Our proposal is to conduct seismic observations using DAS with optical fiber cables. In this study, we applied DAS to the cable along the bullet train in Kumamoto prefecture, Japan, where aftershocks from the 2016 Mw7.3 Kumamoto earthquake are still highly active. We successfully observed strong motions of the Mj6.6 earthquake on January 22, 2022 in Hyuga-nada and several small local earthquakes for distances over 75 km. An accelerometer that simultaneously recorded the event observed a maximum acceleration of approximately 80 gal. The shaking map (maximum strain distribution) for Mj6.6 was estimated by correcting for cycle skipping caused by the dynamic range. The differential phase data indicated cycle skipping at various channels. We estimated the data from cycle-skipped channels using data from adjacent channels that were not cycle-skipped. The attenuation properties of local earthquakes were identified by correcting for site effects, coupling, and amplification of seismic waves by the railway structure. We observed that the peak strain values as well as PGV decreased with increasing hypocenter distance for each magnitude category. Our results indicate that accurately correcting DAS amplitude values can allow for empirical estimation of earthquake magnitude.
    Language: English
    Type: info:eu-repo/semantics/conferenceObject
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