Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1573-1575
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Carrier escape processes from self-organized InAs quantum dots QDs embedded in GaAs are investigated by time-resolved capacitance spectroscopy. Electron emission is found to be dominated by tunneling processes. In addition to tunneling from the ground state, we find thermally activated tunneling involving excited QD states with an activation energy of 82 meV. For holes, the tunnel contribution is negligible and thermal activation from the QD ground state to the GaAs valence band with an activation energy of 164 meV dominates. Extrapolation to room temperature yields an emission time constant of 5 ps for holes, which is an order of magnitude larger than for electrons. The measured activation energies agree well with theoretically predicted QD levels. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126099
Permalink
|
Location |
Call Number |
Expected |
Availability |