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  • 1
    Electronic Resource
    Electronic Resource
    Electron-cyclotron-resonant microwave plasma system for thin-film deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 493-496 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new microwave plasma method for the fabrication of solid films is presented. Microwave power is efficiently transferred to the plasma, resulting in minimal power requirements. Uniform silicon films have been fabricated with a wide range of optical and electronic properties, at high deposition rates and low substrate temperatures. In a magnetically well-confined plasma operating in the vicinity of electron-cyclotron-resonance (ECR) conditions, film properties are strongly dependent upon the intensity of the externally applied dc magnetic field. The departure of the plasma chemistry from that associated with conventional rf systems is manifested in the observation of some opposite trends in the growth of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138915
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  • 2
    Electronic Resource
    Electronic Resource
    Rectifying Action of Non-uniform Fields in Dielectrics (1961)
    [s.l.] : Nature Publishing Group
    Nature 192 (1961), S. 650-651 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Fig. 1. Direct-current and 50 c./s. alternating-current breakdown voltage characteristics of air. Brass rod: Q〉 negative point (d.c.); O, positive point (d.c.); , 50 c./s, (a.c.). Nickel-plated point: x, negative point (d.c.); A, positive point (d.c.); A 50 c./s. (a.c.) Fig. 2. Direct-current and ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/192650a0
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  • 3
    Electronic Resource
    Electronic Resource
    Current Transients in Potassium Chloride (1966)
    [s.l.] : Nature Publishing Group
    Nature 210 (1966), S. 931-932 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] (1) Fig. 1 A (lower traces) shows the current in a potassium chloride specimen resulting from the application of two voltage pulses having the form indicated in the upper trace. The second pulse was applied about 2 sec after the first (both are superimposed on the photograph). Before the first ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/210931b0
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  • 4
    Electronic Resource
    Electronic Resource
    Light Emission in n -Hexane under High Electric Stress (1966)
    [s.l.] : Nature Publishing Group
    Nature 210 (1966), S. 192-192 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] All indications are that the phenomena commence at the cathode, and it is the purpose of this communication to report some further observations on the form of the light emission from the cathode in n-hexane resulting from the application of h'gh d.c. fields. The test cell, electrode systems and ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/210192a0
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  • 5
    Electronic Resource
    Electronic Resource
    Deformation of Gas Bubbles and Liquid Drops in an Electrically Stressed Insulating Liquid (1965)
    [s.l.] : Nature Publishing Group
    Nature 208 (1965), S. 279-280 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] A glass test cell 5 in. x 3 in. x 2 in. was used, containing a pair of parallel brass plane electrodes of size 4 in. x 2 in. with a separation of 0-5 in. aligned horizontally. The test cell was fully filled with transformer oil, and an air bubble or a water drop could be introduced into the cell ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/208279b0
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  • 6
    Electronic Resource
    Electronic Resource
    Low-temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2457-2463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon dioxide films were deposited on crystalline silicon substrates by electron cyclotron resonant (ECR) microwave plasma-enhanced chemical vapor deposition (PECVD). Films were grown on Si〈100〉 substrates at temperatures of 140–600 °C, flow rates of 0.5–10 sccm SiH4, 10–30 sccm O2, and at a pressure of 10−3 Torr. Infrared absorption spectroscopy of the samples indicated no detectable SiH, OH, or SiOH groups. Neither an afterglow chemistry nor He dilution was required to eliminate H impurities as was previously reported for silicon oxide films deposited from rf plasmas. This suggests that significant differences exist between rf and ECR microwave plasma chemistries. We have found that the stoichiometry and index of refraction was not sensitive to oxidant ratio for a wide range of conditions in contrast to other studies. Stoichiometric SiO2 films, with good physical properties, were grown for a much wider range of oxidant ratios relative to those which are characteristic of the rf PECVD technique. In addition, films grown under optimal conditions had infrared absorption spectra nearly identical to those of thermally grown oxides and index of refraction of 1.456, as measured by ellipsometry. We concluded that by using an ECR microwave plasma, SiO2 films with optical and bonding properties comparable to oxides thermally grown at 1000 °C in dry oxygen can be deposited at a low temperature (350 °C) and a low pressure (10−3 Torr) in a O2/SiH4 reactant gas mixture without the need for a carrier gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342815
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  • 7
    Electronic Resource
    Electronic Resource
    High-field hole injection, conduction, and breakdown in polyethylene films fabricated by plasma polymerization (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2489-2496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage (I-V) characteristics of polyethylene films fabricated by plasma polymerization have been measured at very high electric fields using linear ramp voltages. Experimental results show that at average fields higher than 1 MV/cm, electric conduction is mainly due to the Fowler–Nordheim-type tunneling injection of holes from the anode and the high hole mobility. There is no evidence of impact ionization at fields close to the breakdown strength. High-field conduction is filamentary and governed by the trapped hole space charge. Internal discharges such as electrical treeing and breakdown are initiated by thermal instability within high-current density regions of main conduction filaments (or channels), and then followed by the creation of low-density domains to provide large mean free paths for subsequent impact ionization which leads to an indefinite increase in carrier multiplication and final destruction of the material inside the filaments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348966
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  • 8
    Electronic Resource
    Electronic Resource
    High field electrical conduction and breakdown in silicon incorporated polyethylene films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 919-924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage (I-V) characteristics of silicon-incorporated polyethylene films fabricated by plasma polymerization have been measured at very high electric fields. The experimental results show that the electric conduction at high fields is due mainly to Fowler–Nordheim type tunneling injection of holes from the anode, and that the incorporation of silicon in polyethylene creates hole traps, thus suppressing the conduction current and enhancing the breakdown strength. The amount of positive space charge resulting from the hole trapping increases with increasing magnitude and duration of the applied field for a fixed silicon content, and increases with increasing silicon content for a fixed magnitude and duration of the applied field. This positive space charge tends to suppress the actual field at the hole injecting contact and to enhance the actual field at the electron injecting contact. For fields higher than a certain critical value, the rate of the current increase with field changes rapidly. This phenomenon is attributed to the onset of double injection. This means that the contribution of the electron current to the total current becomes significant due to the gradual enhancement of the field at the electron injecting contact by the large amount of accumulated positive space charge. It is concluded that silicon incorporated in polyethylene introduces new hole traps which in turn reduces the hole mobility and creates more positive trapped space charge. The overall effect would be to reduce the conduction current and to increase the breakdown strength of the polyethylene if a proper amount of silicon is incorporated in it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349599
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  • 9
    Electronic Resource
    Electronic Resource
    Ultraviolet absorption and photoconduction spectra of polyimide films fabricated at various curing temperatures (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 3445-3451 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The absorption and photoconduction spectra in the ultraviolet region for PMDA-ODA polyimide films fabricated under various curing temperatures have been measured. There are four absorption peaks located at 3.65, 4.35, 5.65, and 6.40 eV in the fully cured polyimide films. The peak at 6.40 eV is practically independent of the curing temperature, but the other three peaks increase with increasing curing temperature. These four peaks are due to intra- and intermolecular optical transitions. In the photoconduction quantum efficiency spectra, there are also four peaks in the fully cured polyimide films but they are located at 3.55, 4.05, 4.90, and 5.80 eV. Analysis of the photoconduction quantum efficiency spectra yields values of 4.17 and 4.37 eV as the potential barrier heights for photoemission from Au and Ag electrodes to polyimide, respectively. The quantum efficiency increases with increasing applied electric field, following closely the Onsager theory with a thermalization separation 30 A(ring) in the uv region. The primary yield increases with increasing curing temperature. All experimental results are briefly discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465070
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  • 10
    Electronic Resource
    Electronic Resource
    Plasma implantation technique for incorporation of foreign elements into polymer films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 986-988 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A plasma formed in a gas containing desired foreign elements dissociates molecules, and activates and ionizes foreign elements. These reactive foreign elements are then implanted into a polymer film under an appropriate bias field and substrate temperature. We report that nitrogen and silicon are well incorporated into polyethylene films using this technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138650
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