Publication Date:
2014-12-10
Description:
We demonstrate the operation of GaSb p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on (111)A surfaces with Al 2 O 3 gate dielectrics formed by atomic-layer deposition at 150 °C. The p-MOSFETs on (111)A surfaces exhibit higher drain current and lower subthreshold swing than those on (100) surfaces. We find that the interface-state density ( D it ) values at the Al 2 O 3 /GaSb MOS interfaces on the (111)A surfaces are lower than those on the (100) surfaces, which can lead to performance enhancement of the GaSb p-MOSFETs on (111)A surfaces. The mobility of the GaSb p-MOSFETs on (111)A surfaces is 80% higher than that on (100) surfaces.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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