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  • 1
    Electronic Resource
    Electronic Resource
    Non-radiative decay of ions and molecules in solids by R. Englman (1980)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 36 (1980), S. 1090-1091 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567739480002203
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  • 2
    Electronic Resource
    Electronic Resource
    Traps responsible for 360 and 390 K glow peaks in X-irradiated NaCl:Tl crystals (1972)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 28 (1972), S. 355-356 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Correlated measurements on the thermoluminescence and optical absorption of X-irradiated NaCl:Tl indicate that the glow peaks observed at 360 and 390°K may be due respectively to electrons released from F′ and some species of higher aggregate centres.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567739472000968
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  • 3
    Electronic Resource
    Electronic Resource
    Luminescence of undoped sodium chloride (1977)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 33 (1977), S. 344-345 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Pure sodium chloride, quenched rapidly from high temperatures, yields a pronounced excitation band at 260 nm which induces a prominent emission band at 360 nm. It is suggested that these bands are characteristic of the centres involving oxygen and ion-vacancy interactions in the NaCl lattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567739477000850
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  • 4
    Electronic Resource
    Electronic Resource
    Novel self-aligned W/TiN/TiSi2 contact structure for very shallow junctions and interconnections (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1672-1674 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes a novel structure for very large scale integrated contact and interconnect technology that involves selective deposition of W on self-aligned TiN/TiSi2. The TiN layer serves to protect reaction between WF6 and TiSi2 and underlying Si during W deposition as well as to promote adhesion of W layer and minimize contact resistance. The selective deposition of W on TiN, very difficult with conventional hydrogen reduction process, is accomplished by employing a recently developed silane reduction process. The structure prevents silicon consumption leading to the encroachment commonly found in tungsten deposited directly on silicon in very shallow junctions. It is demonstrated that such a structure results in low contact resistance and junction leakages and is applicable to subhalf-micron devices. Tungsten with low resistivity of 8–9 μΩ cm can be achieved at room temperature with the resulting drop by a factor of 3–4 at liquid-nitrogen temperature making the structure more attractive for low-temperature application.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101300
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  • 5
    Electronic Resource
    Electronic Resource
    Non-self-limiting nature of silicon reduction of WF6 in cold wall systems (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1428-1441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper addresses the kinetics and related mechanisms of non-self-limiting nature of Si reduction of WF6 in cold wall systems for the first time. The growth of such films in low-pressure chemical-vapor deposition (LPCVD) and ultrahigh vacuum (UHV) systems is compared. Both systems produce non-self-limiting, uniform, controllable, nonporous films. The growth is controlled by process parameters such as the wafer temperature and WF6 concentration at the wafer surface. The order of the Si reduction reaction is 0.5 in the concentration of WF6. The tungsten films deposited in the LPCVD system contaminated with water vapor are thicker than the films grown in the UHV system even when the temperature is below 450 °C. Such thicker films are produced as a result of the formation of an amorphous W-O layer. From the thermodynamic considerations, the origin of W-O layer is attributed to a parallel reaction between water vapor, WF6, and substrate Si. The beneficial role played by the W-O layer is that it prevents any volume shrinkage of the converted layer and restricts lateral encroachment. In the absence of such a layer as in the case of the UHV system, severe volume shrinkage and encroachment are observed. A theoretical model together with physical mechanisms explaining the non-self-limiting phenomenon are proposed. The mechanism suggests that a fine-grained W structure surrounded by a W-O layer, formed in the LPCVD system, assists faster out-diffusion of Si through the tungsten films compared to the UHV system. The higher values of the diffusion coefficient for Si out-diffusion through films grown in the LPCVD system as compared with the UHV system support this mechanism. The out-diffused Si is substituted to W by reduction reaction to complete the film growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351265
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  • 6
    Electronic Resource
    Electronic Resource
    Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH4 reduced chemically vapor deposited W (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5625-5629 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of deposition temperature on growth, composition, structure, adhesion properties, stress, and resistivity of chemically vapor deposited W deposited purely by SiH4 reduction of WF6 are discussed. At lower deposition temperatures, due to incomplete Si reduction reaction, a small amount of Si is incorporated in the film. This elemental Si in W is responsible for the observed high stresses and high resistivities over a wide temperature range. With the increase in the deposition temperature, the conversion of incorporated Si as well as the initial Si reduction are taking place, stimulating increased grain growth and thereby relieving stress and reducing resistivity. The optimum values for stress and resistivity are achieved around 500 °C, as Si content is at its minimum. At higher temperatures the reaction between residual Si and W, is the prime cause of resistivity increase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346974
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of Al-Cu via/interconnect by low-pressure collimated sputtering (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2484-2486 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes the effect of low-pressure collimated sputtering (LPCS) on deposition rates, step coverages, and electrical properties of Al-Cu. The LPCS deposition is achieved in a magnetron sputter deposition system with a hollow cathode and collimator. The deposition results show that as the via or line size reduces, a complete fill requires a monotonic increase in the aspect ratio of the collimator which limits the throughput for a thick deposition, especially at high pressures ((approximately-greater-than)1 mT). The benefit of the LPCS is the improved deposition rate (scaled to power) of 1.5–2× compared to the conventional high-pressure collimated deposition. The integration of LPCS process to fabricate a two-level Al-Cu metal structure with submicron Al-Cu studs (aspect ratio of 2) shows excellent via and electromigration resistances. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114003
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  • 8
    Electronic Resource
    Electronic Resource
    Collimated sputtering of TiN/Ti liners into sub-half-micrometer high aspect ratio contacts/lines (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2613-2615 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ sputtering of TiN/Ti liners into high aspect ratio (six to eight) sub-half-micrometer contacts with step coverages more than 40% on the side as well as on the bottom is demonstrated for the first time. The process utilizes a collimator, honeycomb-like structure through which atoms are directed into contact holes. A study of step coverages, deposition rates, contact resistances, and junction leakages for Ti and TiN layers as a function of the aspect ratio of the collimator is carried out. The extendibility of collimation beyond 0.25 μm contact geometries is demonstrated. The optimum deposition rate is achieved based on the aspect ratio of the collimator. The structures formed with chemical vapor deposition (CVD) of W on TiN/Ti liners exhibit an order of magnitude improvement in contact resistance over the structures formed without collimated liners, especially for geometries below a critical geometry. The reverse leakages using the shallow junctions (0.12–0.14 μm) remain unchanged.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108116
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  • 9
    Electronic Resource
    Electronic Resource
    Trap distribution changes in quenched KCl by heating or pressure (1964)
    Springer
    The European physical journal 178 (1964), S. 375-379 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Pure Potassium chloride, when quenched rapidly from melt shows pronounced glow peak at 250°K. The intensity of the glow peak has been found to decrease by heating the specimen to around 450°K, or by subjecting it to pressure. A qualitative interpretation of these effects has been offered on the basis of quenched —in cation —anion vacancy pairs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01377840
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of F- and Z2-light illumination on thermal glow curves of pretreated NaCl:Ca phosphors (1985)
    Springer
    Journal of materials science 4 (1985), S. 1115-1118 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00720430
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