ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC samples implanted at 600°C with 1020 cm-3 of B or B and C to adepth of ~0.5 μm, capped with (BN/AlN), and annealed at temperatures ranging from1400°C – 1700°C were studied using variable temperature cathodoluminescence. Newemission lines, which may be associated with stacking faults, were observed in thesamples co-implanted with B and C, but not in the samples implanted only with B.For both the B and B and C co-implanted samples, the intensity of the line near 3.0 eVdecreases with increasing annealing temperature, TA, and this line is not observedafter annealing at 1700°C. The D1 defect related emission lines are observed in theluminescence spectra of all samples and their relative intensities seem to vary with theimplantation-annealing schedule and excitation conditions
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.847.pdf
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