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  • 1
    Electronic Resource
    Electronic Resource
    Fabrication of nanometer size gaps in a metallic wire (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3828-3830 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a simple shadow mask method to fabricate electrodes with nanometer scale separation. Metal wires with gaps are made by incorporating multiwall carbon nanotubes or single-wall carbon nanotube (SWNT) bundles into a trilayer electron beam lithography process. The simple, highly controllable, and scaleable method has been used to make gaps with widths between 20 and 100 nm and may be extended to gap sizes of 1 nm. We report electron transport measurements of individual SWNTs bridging nanogaps with electrode spacings of approximately 20 nm. Metallic SWNTs exhibit quantum dot behavior with an 80 meV charging energy and a 20 meV energy level splitting. We observe a strong field effect behavior in short semiconducting SWNT segments, evidence for diffusive electron transport in these samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126795
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  • 2
    Electronic Resource
    Electronic Resource
    Single-wall carbon nanotube circuits assembled with an atomic force microscope (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3014-3016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a method to assemble single-wall carbon nanotube (SWNT) circuits using a tapping mode atomic force microscope. Nanotubes can be controllably translated, rotated, cut, and placed on top of one another by varying the tip–sample force, and the tip speed. These operations let us construct complex nanotube circuits, which are contacted using electron beam lithography. We present data from a circuit of two crossed SWNT bundles. The lower bundle behaves as two quantum dots in series, separated by a tunnel barrier created at the junction. Gate voltages can tune the number of charges on each dot and the tunnel barrier transmission. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125218
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  • 3
    Electronic Resource
    Electronic Resource
    Carbon nanotube composites for thermal management (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2767-2769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-wall carbon nanotubes (SWNTs) were used to augment the thermal transport properties of industrial epoxy. Samples loaded with 1 wt % unpurified SWNT material showed a 70% increase in thermal conductivity at 40 K, rising to 125% at room temperature; the enhancement due to 1 wt % loading of vapor grown carbon fibers was three times smaller. Electrical conductivity data showed a percolation threshold between 0.1 and 0.2 wt % SWNT loading. The Vickers hardness rose monotonically with SWNT loading up to a factor of 3.5 at 2 wt %. These results suggest that the thermal and mechanical properties of SWNT-epoxy composites are improved, without the need to chemically functionalize the nanotubes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1469696
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  • 4
    Electronic Resource
    Electronic Resource
    Controlled creation of a carbon nanotube diode by a scanned gate (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3326-3328 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use scanning gate microscopy to precisely locate the gating response in field-effect transistors (FETs) made from semiconducting single-wall carbon nanotubes. A dramatic increase in transport current occurs when the device is electrostatically doped with holes near the positively biased electrode. We ascribe this behavior to the turn-on of a reverse biased Schottky barrier at the interface between the p-doped nanotube and the electrode. By positioning the gate near one of the contacts, we convert the nanotube FET into a rectifying nanotube diode. These experiments both clarify a longstanding debate over the gating mechanism for nanotube FETs and indicate a strategy for diode fabrication based on controlled placement of acceptor impurities near a contact. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419055
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical and thermal transport properties of magnetically aligned single wall carbon nanotube films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 666-668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dense, thick films of aligned single wall carbon nanotubes and nanotube ropes have been produced by filtration/deposition from suspension in strong magnetic fields. Electrical resistivity exhibits moderate anisotropy with respect to the alignment axis, while the thermopower is the same when measured parallel or perpendicular to this axis. Both parameters have identical temperature dependencies in the two orientations. Thermal conductivity in the parallel direction exceeds 200 W/mK, within a decade of graphite. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127079
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  • 6
    Electronic Resource
    Electronic Resource
    Structure of 2-oxo-4-thiazolidinecarboxylic acid (1991)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 47 (1991), S. 1481-1482 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270190012793
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  • 7
    Electronic Resource
    Electronic Resource
    Structure of 6-nitro-4-phenyl-1,2-dihydroquinazoline (1989)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 45 (1989), S. 1114-1115 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270189001769
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  • 8
    Electronic Resource
    Electronic Resource
    Structure of a highly substituted pyrazolidin-3-one (1992)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 48 (1992), S. 1476-1479 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270192000519
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  • 9
    Electronic Resource
    Electronic Resource
    Single electron charging effects in semiconductor quantum dots (1991)
    Springer
    The European physical journal 85 (1991), S. 367-373 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have studied charging effects in a lateral split-gate quantum dot defined by metal gates in the two dimensional electron gas (2 DEG) of a GaAs/AlGaAs heterostructure. The gate structure allows an independent control of the conductances of the two tunnel barriers separating the quantum dot from the two 2 DEG leads, and enables us to vary the number of electrons that are localized in the dot. We have measured Coulomb oscillations in the conductance and the Coulomb staircase in current-voltage characteristics and studied their dependence on the conductances of the tunnel barriers. We show experimentally that at zero magnetic field charging effects start to affect the transport properties when both barrier conductances are smaller than the first quantized conductance value of a point contact at 2e 2/h. The experiments are described by a simple model in terms of electrochemical potentials, which includes both the discreteness of the electron charge and the quantum energy states due to confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01307632
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  • 10
    Electronic Resource
    Electronic Resource
    Quantized current in a quantum dot turnstile (1991)
    Springer
    The European physical journal 85 (1991), S. 381-388 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have performed RF experiments on a lateral quantum dot defined in the two dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. The small capacitance of the quantum dot gives rise to single-electron charging effects, which we employed to realize a quantum dot turnstile device. By modulating the tunnel barriers between the quantum dot and the 2DEG leads with two phase-shifted RF signals, we pass an integer number of electrons through the quantum dot per RF cycle. This is demonstrated by the observation of quantized current plateaus at multiples ofef in current-voltage characteristics, wheref is the frequency of the RF signals. When an asymmetry is induced by applying unequal RF voltages, our quantum dot turnstile operates as a single-electron pump producing a quantized current at zero bias voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01307634
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