Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 2927-2929
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Highly (110)-oriented and (100) nearly epitaxial 0.7PMN-0.3PT thin films were deposited on (1012) sapphire and (100) LaAlO3 substrates, respectively, using a dip-coating method. Optical waveguide characterization and electro-optic effect measurements of the film on sapphire substrate were demonstrated. Low propagation loss of 4.1 dB/cm and high quadratic electro-optic coefficient of 0.75×10−16 (m/V)2 were obtained at wavelength of 632.8 nm. Epitaxial PMN-PT thin films will be suitable for integrated optic devices. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121496
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