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  • 1
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    Mean structure and variability of the cold dome northeast of Taiwan (2012)
    The Oceanography Society
    Details
    Publication Date: 2022-05-25
    Description: Author Posting. © The Oceanography Society, 2011. This article is posted here by permission of The Oceanography Society for personal use, not for redistribution. The definitive version was published in Oceanography 24 no. 4 (2011): 100–109, doi:10.5670/oceanog.2011.98.
    Description: The "cold dome" off northeastern Taiwan is one of the distinctive oceanic features in the seas surrounding Taiwan. The cold dome is important because persistent upwelling makes the region highly biologically productive. This article uses historical data, recent observations, and satellite-observed sea surface temperatures (SST) to describe the mean structure and variability of the cold dome. The long-term mean position of the cold dome, using the temperature at 50 m depth as a reference, is centered at 25.625°N, 122.125°E. The cold dome has a diameter of approximately 100 km, and is maintained by cold (〈 21°C) and salty (〉 34.5) waters upwelled along the continental slope. The ocean currents around the cold dome, although weak, flow counterclockwise. The monsoon-driven winter intrusion of the Kuroshio current onto the East China Sea shelf intensifies the upwelling and carries more subsurface water up to the cold dome than during the summer monsoon season. On a shorter timescale, the cold dome's properties can be significantly modified by the passage of typhoons, which creates favorable physical conditions for short-term Kuroshio intrusions in summer. The surface expression of the cold dome viewed from satellite SST images is often not domelike but instead is an irregular shape with numerous filaments, and thus may contribute substantially to shelf/slope exchange. As a result of persistent upwelling, typhoon passage, and monsoon forcing, higher chlorophyll a concentrations, and thus higher primary productivity, are frequently observed in the vicinity of the cold dome.
    Description: The National Science Council (NSC) of Taiwan sponsored this study under grant NSC98-2611-M-002-019-MY3. NSC supported C.-C. Chen under grant NSC98-2611-M-003-001-MY3.
    Repository Name: Woods Hole Open Access Server
    Type: Article
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  • 2
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    Observations of a freshwater pulse induced by Typhoon Morakot off the northern coast of Taiwan in August 2009 (2014)
    Sears Foundation for Marine Research
    Details
    Publication Date: 2022-05-26
    Description: Author Posting. © Sears Foundation for Marine Research, 2013. This article is posted here by permission of Sears Foundation for Marine Research for personal use, not for redistribution. The definitive version was published in Journal of Marine Research 71 (2013): 19-46, doi:10.1357/002224013807343452.
    Description: In this paper we describe large-scale impacts from a typhoon on the circulation over the continental shelf and slope north of Taiwan. Typhoon Morakot was a category 2 tropical storm that landed in central Taiwan, but caused destruction primarily in southern Taiwan from Aug. 8–10, 2009. The typhoon brought record-breaking rainfall; approximately 3 m accumulated over four days in southern Taiwan. River discharge on the west coast of Taiwan increased rapidly from Aug. 6–7 and peaked on Aug. 8, yielding a total volume 27.2 km3 of freshwater discharged off the west coast of Taiwan over five days (Aug. 6–10). The freshwater mixed with ambient seawater, and was carried primarily by the northeastward-flowing Taiwan Strait current to the sea off the northern coast of Taiwan. Two joint surveys each measured the hydrography and current velocity in the Taiwan Strait and off the northeastern coast of Taiwan roughly one week and two and a half weeks after Morakot. The first survey observed an Ω-shaped freshwater pulse off the northern tip of Taiwan, in which the salinity was ∼1 lower than the climatological mean salinity. The freshwater pulse met the Kuroshio and formed a density front off the northeastern coast of Taiwan. The hydrographic data obtained in the second survey suggested that the major freshwater pulse left the sea off the northern and northeastern coasts of Taiwan, which may have been carried by the Kuroshio to the northeast. Biogeochemical sampling conducted after Morakot suggested that the concentrations of nutrients in the upper ocean off the northern coast of Taiwan increased remarkably compared with their normal values. A typhoon-induced biological bloom is attributed to the inputs both from the nutrient-rich river runoff and upwelling of the subsurface Kuroshio water.
    Description: This study is supported by the National Science Council (NSC) of Taiwan under grant NSC98-2611-M-002-019-MY3. C.-C. Hung is supported by NSC under grant NSC100-2119-M- 110-003. LC was supported by ONR grant N00014-08-1-0557 and NOAA grant NA10OAR4320156.
    Repository Name: Woods Hole Open Access Server
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  • 3
    Electronic Resource
    Electronic Resource
    Dynamic Response of Two-Core Sandwich Composite Structures under Impact (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 136 (Feb. 2008), p. 115-124 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Traditional sandwich structure consists of two face sheets and a core. With an internalsheet inserted into the core, a two-core sandwich structure is then formed. Two-core sandwichstructures with composite laminated face sheets and a thin internal sheet subjected to low velocityimpact are studied in this paper. Local displacement of the core under the point of impact isinvestigated. Simulated results show that the local displacement of the core along the direction ofthe impact has been decreased significantly by introducing the internal sheet into a traditional singlesandwich structure and by reducing the space between the internal sheet and the impacted face sheet.Shear deformation in the cores of a two-core sandwich structure is also investigated and attention isfocused on shear strains on interfaces between face/internal sheets and the cores. Results furthershow that strain levels in selected elements at the interested interfaces depend upon locations of theselected elements and arrangements of the internal sheet
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.136.115.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Reduction of Surface Work Function of Nano-Amorphous Carbon Film due to Hydrogen Chemisorption (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 701-704 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: In this paper it had been observed experimentally that hydrogen adsorptionon nano-structure sp2-bonded amorphous carbon film, which was produced onceramic substrate by microwave plasma chemical vapor deposition system, couldimprove its field emission property. Considering that surface morphology is notsignificantly varied with hydrogen adsorption, we suggested that hydrogen adsorptionon the film surface mainly lowered the work function of emitter surface.For confirmation of the above suggestion, theoretical calculation was performed toinvestigate work functions of graphite (0001) surfaces with different hydrogenchemisorption sites at 1/2 H coverage by using first principles method based onDFT-GGA. An asymmetric slab supercell approach with periodic boundaries had beenemployed to model the graphite (0 0 0 1) surface. The calculation results were inagreement with experimental conclusion
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.701.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Blue and red photoluminescence from Ge+ implanted SiO2 films and its multiple mechanism (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1790-1792 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Under violet excitation, a strong blue band and a broad red band are emitted simultaneously from the Ge nanocrystal embedded SiO2 films fabricated by Ge+ implantation and annealing. The blue band exhibits a complex annealing behavior, and the photoluminescence excitation spectral analysis indicates that it results from a combination of several implantation-induced deficient centers. The peak position of the red band shifts from 600 to 640 nm when the mean size of Ge nanocrystals increases from 4.3 to 6.7 nm, suggesting that the red band comes from the radiative recombination of excitons confined in Ge nanocrystals. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122283
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of density of Ge nanocrystals on violet–blue photoluminescence of Ge+-implanted SiO2 film (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6139-6142 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescent SiO2 films containing Ge nanocrystals (nc-Ge) are fabricated by Ge+ ion implantation and thermal annealing. The nc-Ge density is controlled by the implanted Ge+ dose. Under ultraviolet excitation, the films exhibit two photoluminescent (PL) bands simultaneously in the violet–blue region. With increasing annealing temperature (Tan) in the range of 1100 °C, the relative ratio of the intensities of the two PL bands increases slightly from 2.3 to 3 for the films with a dose of 1×1016 cm−2, whereas it increases remarkably from 2.8 to 4.5 for films with a dose of 1×1017 cm−2. On the other hand, the PL integrated intensities of the two kinds of films reach their maxima at Tan of 900 and 700 °C, respectively. It is proposed that the two PL bands are due to germanium-related oxygen-deficient centers. The annealing characteristics are explained well. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371665
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  • 7
    Electronic Resource
    Electronic Resource
    Tunable superstructures in hydrothermally etched iron-passivated porous silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2906-2908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunable superstructures were generated by hydrothermally etching silicon wafers in the solution of HF containing ferric nitrate. The structural units of these superstructures arrayed perpendicular to the surface and their shapes could be formed as cone-like, pillar-like, or crater-pit-like through changing the solution concentration of Fe3+ in the etching process. The photoluminescence (PL) in as-prepared porous silicon was found to be independent of the microlocations chosen to carry out the PL measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125186
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  • 8
    Electronic Resource
    Electronic Resource
    Electroluminescence and carrier transport of SiO2 film containing different density of Ge nanocrystals (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2459-2461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescent SiO2 films containing Ge nanocrystals (nc-Ge) are synthesized by implanting Ge ions into SiO2 films thermally grown on crystalline silicon, and the nc-Ge density was controlled by Ge+ implantation doses. The current–voltage measurements of their metal–oxide–semiconductor structures illustrate that the density and the distribution of nc-Ge have significant effects on their electroluminescence and carrier transport. The temperature-dependent current behavior is weaker in the films with low density, but stronger in the films with high density. Electroluminescent spectra indicate that high electric field can be established only in the films with low density. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123880
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence study of defects in Si+ ion implanted thermal SiO2 films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3609-3613 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Point defects and structure damages in Si-implanted thermal SiO2 films were examined by photoluminescence (PL) spectra, electron spin resonance spectra, and infrared absorption spectra. Under ∼5 eV excitation, the as-implanted film had two PL bands peaked at 4.3 and 2.4 eV, respectively. After thermal annealing, the peak energy of the low-energy band shifted from 2.4 to 2.7 eV with the increase of the annealing temperature to 1100 °C, and its intensity and width, and the relative ratio between the intensities of the two PL bands changed also. The change of the ratio, and the width and peak position of the low-energy band via annealing temperature was consistent with the recovery of the implantation-induced structure damage such as densification and distortion of silicon tetrahedra. We propose that the two PL bands are due to neutral oxygen vacancies (NOVs), and the PL characteristics of the NOV defects are related to the structure damage of the SiO2 network. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366578
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  • 10
    Electronic Resource
    Electronic Resource
    Electroluminescence and photoluminescence of Ge+-implanted SiO2 films thermally grown on crystalline silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2505-2507 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescent devices have been fabricated based on Ge+-implanted SiO2 films thermally grown on crystalline silicon. Both room-temperature electroluminescence and photoluminescence spectra are found to have three luminescent bands peaked at 3.1, 2.1, and 1.6 eV. The electroluminescent devices have onsets for emission under forward bias of 5 V and under reverse bias of −13 V. Its emission is stable and reproducible. Spectral analyses suggest that the electroluminescent excitation of the 3.1 eV band may be related to the impact ionization by hot electrons, whereas that of the 2.1 and 1.6 eV bands to the radiative recombination of hole-electron pairs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120102
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