Publication Date:
2017-02-14
Description:
Author(s): B. V. Olson, J. F. Klem, E. A. Kadlec, J. K. Kim, M. D. Goldflam, S. D. Hawkins, A. Tauke-Pedretti, W. T. Coon, T. R. Fortune, E. A. Shaner, and M. E. Flatté InAs 1 − x Sb x type-II superlattices (T2SLs) are of significant interest for next-generation infrared photodetectors, due to their long minority-carrier lifetime. However, little is known about hole transport along the growth axis, the direction of photocurrent flow. This study presents quantitative measurements of vertical hole transport in band-engineered T2SL transistors, which turns out to be strikingly similar to electronic transport in disordered bulk semiconductors like amorphous silicon. These results carry significant implications for optimizing T2SLs and devices based on them. [Phys. Rev. Applied 7, 024016] Published Mon Feb 13, 2017
Electronic ISSN:
2331-7019
Topics:
Physics
Permalink