Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 364-366
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Bias sputtering at low energies, i.e., comparable to typical crystal interatomic binding energies, has been utilized to control the kinetics of thin-film growth. It was found that the crystallographic structures of sputter-deposited silicon films are drastically changed by the energy of ions incident at the substrate. As a result, formation of high quality epitaxial silicon films on (100) silicon substrates has been realized at such low temperatures as 320–350 °C. At the same time, low-temperature impurity doping of the epitaxial layer has been also demonstrated. Furthermore, the low-energy bias sputtering process has made it possible to perform very effective substrate surface cleaning at extremely low temperatures without introducing any damage to the substrate.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99914
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