Publication Date:
2013-11-02
Description:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Wang, L -- Meric, I -- Huang, P Y -- Gao, Q -- Gao, Y -- Tran, H -- Taniguchi, T -- Watanabe, K -- Campos, L M -- Muller, D A -- Guo, J -- Kim, P -- Hone, J -- Shepard, K L -- Dean, C R -- New York, N.Y. -- Science. 2013 Nov 1;342(6158):614-7. doi: 10.1126/science.1244358.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Electrical Engineering, Columbia University, New York, NY 10027, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/24179223" target="_blank"〉PubMed〈/a〉
Print ISSN:
0036-8075
Electronic ISSN:
1095-9203
Topics:
Biology
,
Chemistry and Pharmacology
,
Computer Science
,
Medicine
,
Natural Sciences in General
,
Physics
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