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  • 1
    Electronic Resource
    Electronic Resource
    Developmental regulation in the expression of rat heart glucose transporters
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 177 (1991), S. 1095-1100 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0006-291X(91)90651-M
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: Misfit dislocations and critical thickness of heteroepitaxy [J. Appl. Phys. 69, 7901 (1991)] (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4009-4009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349174
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  • 3
    Electronic Resource
    Electronic Resource
    Misfit dislocations and critical thickness of heteroepitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7901-7903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An expression is derived for the critical thickness of heteroepitaxial films by taking the energy minimization approach. It is exactly identical to the critical thickness obtained by Matthew and Blakeslee [J. Cryst. Growth 27, 118 (1974)] using a force balance approach, after allowing for a discrepancy judged to be an unmentioned approximation in the latter. The equivalence of the two formulations is explained conceptually. The reason is pointed out for the very different critical thickness obtained by People and Bean [Appl. Phys. Lett. 47, 322 (1985); 49, 229 (1986)] using the energy minimization approach. It is further shown that misfit dislocations do not appear en masse catastrophically when the critical thickness is reached. Rather, their density increases gradually with the epitaxial thickness, approaching only asymptotically a value required for a complete relief of film stress as the thickness tends to infinity. Any observed sudden mass appearance of misfit dislocations must be attributed to a substantial supercritical thickness actually existing, prior to nucleation of dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347476
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  • 4
    Electronic Resource
    Electronic Resource
    Stress from isolation trenches in silicon substrates (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1092-1101 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress from isolation trenches in silicon integrated circuits has been studied using an analytical solution that the author recently obtained for the stress problem of a parallelepipedic inclusion in a three-dimensional semispace. The origin of the stress is assumed to be the thermal mismatch between the trench fill and the silicon substrate, or equivalently the intrinsic stress of the trench fill. The effect of various trench parameters such as the trench length, width, and depth, as well as the proximity to other trenches, are investigated for a number of cases. The results are shown for all stress components in order to provide an insight into the characteristics of the trench-induced stress. There are some surprises: Some examples are the existence of a tensile pocket in the stress component normal to the trench side, and that stress components both normal and parallel to the trench increase greatly in intensity as the trench becomes shorter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345795
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  • 5
    Electronic Resource
    Electronic Resource
    Stress-related problems in silicon technology (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 53 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicon integrated-circuits chip is built by contiguously embedding, butting, and overlaying structural elements of a large variety of materials of different elastic and thermal properties. Stress develops in the thermal cycling of the chip. Furthermore, many structural elements such as CVD (chemical vapor deposition) silicon nitride, silicon dioxide, polycrystalline silicon, etc., by virtue of their formation processes, exhibit intrinsic stresses. Large localized stresses are induced in the silicon substrate near the edges and corners of such structural elements. Oxidation of nonplanar silicon surfaces produces another kind of stress that can be very damaging, especially at low oxidation temperatures. Mismatch of atomic sizes between dopants and the silicon, and heteroepitaxy produce another class of strain that can lead to the formation of misfit dislocations. Here we review the achievements to date in understanding and modeling these diverse stress problems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349282
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of process parameters on stress development in two-dimensional oxidation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 323-330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified viscoelastic analysis has been made of the stress evolution during two-dimensional (2D) oxidation of silicon substrates, with the objective of learning the effect of process parameters such as temperature and steam pressure. A cylindrical silicon surface was chosen for simplicity of analysis, and yet it still has most of the essential elements pertinent to practical problems such as, e.g., the oxidation of trench corners in silicon integrated circuits. With correlations between the viscosity and the hydroxyl content of SiO2, and between the hydroxyl content and the steam pressure, the analysis shows that stress reduction can be achieved by carrying out oxidation at high steam pressures. However, stresses remain rather high if the oxidation temperature is as low as 800 °C. For a linear-parabolic oxidation kinetics, both the oxide and the substrate stresses do not increase indefinitely with the increase of oxide thickness, but reach their respective peaks at oxide thicknesses that are dependent on process parameters. The present results should be useful in serving as guidelines in the selection of 2D oxidation conditions. The accuracy of a previous 2D oxidation model based on the viscous flow of an incompressible fluid has also been assessed with reference to the viscoelastic model. The incompressible-fluid model is found to be quite accurate at high temperatures (approximately-greater-than)900 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341430
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  • 7
    Electronic Resource
    Electronic Resource
    Stress from a parallelepipedic thermal inclusion in a semispace (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2741-2743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Many problems concerning stress arising from the embedding of a foreign body in a semi-infinite matrix can be described as thermal inclusion involving a single or an assemblage of parallelepipedic elements. Because of its basic usefulness, we present an analytical solution to the problem of a parallelepipedic thermal inclusion in a three-dimensional semispace. Application of this solution to the currently important problem of trench isolations in integrated circuits will be presented separately elsewhere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344194
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  • 8
    Electronic Resource
    Electronic Resource
    Interstitial and vacancy concentrations in the presence of interstitial injection (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1069-1075 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In processes such as thermal oxidation and phosphorus diffusion, where self-interstitials are generated in excess, what happens to the vacancy concentration may significantly affect many diffusion processes which occur via dual mechanisms. Most authors in diffusion modelling have assumed as self-evident that, for a very long time or in steady state, the product of the vacancy and the interstitial concentrations should be a constant. It is shown here that this assumption is generally invalid. The fallacy in the analogy between this case and the solubility product is pointed out. A correct relationship is first derived on a uniform defect concentration approximation. Then rigorous expressions for both the vacancy and the interstitial concentrations are given from an exact solution of simultaneous vacancy and interstitial continuity equations that include diffusion, recombination, and generation terms, under appropriate boundary conditions. The errors in the results from previous speculations are especially severe in the surface region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334548
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  • 9
    Electronic Resource
    Electronic Resource
    Kinetics of interstitial supersaturation and enhanced diffusion in short-time/low-temperature oxidation of silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4527-4532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of the supersaturation of self-interstitials and the enhancement of impurity diffusivity in short-time/low-temperature oxidation of silicon is investigated analytically. It is found that, whereas in long-time/high-temperature oxidation the interstitial supersaturation and the diffusivity enhancement decrease with time as t−n (n(approximately-equal-to)0.2–0.3), in short-time low-temperature oxidation they start from zero and increase with time, until some characteristic time determined by the linear-parabolic oxide growth. This characteristic time increases rapidly with the decrease of temperature. This kinetic behavior has not been expected previously, mainly because there is no available data on stacking fault growth and on diffusion enhancement under the short-time/low-temperature condition which has become common in modern IC processings. The more general case of linear-parabolic oxidation and the effect of bulk recombination have also been analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335353
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  • 10
    Electronic Resource
    Electronic Resource
    Point defect generation and enhanced diffusion in silicon due to tantalum silicide overlays (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 308-310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum silicide deposited directly on monocrystalline silicon substrates and annealed at 950 °C causes enhanced diffusion of both boron and antimony in buried layers. The effect is taken as evidence of vacancy supersaturation, since it is known that antimony diffuses in silicon by an almost entirely vacancy mechanism. It also indicates a substantial vacancy component in boron diffusion, at least at 950 °C, or lower. The simultaneous occurrence of boron and antimony enhanced diffusion contrasts with the nitridation effect on diffusion previously reported. That the enhanced diffusion occurred in buried layers excludes the snow-plow mechanism. The Si:Ta ratio of the sputter-deposited tantalum silicide is slightly less than 2. The interpretation is that further silicidation generates vacancies by removing silicon atoms from the silicon substrate. Enhanced diffusion was not detectable when there was a 150-nm intervening layer of polycrystalline silicon film between the silicide and the monocrystalline silicon substrate, indicating that polycrystalline silicon is an effective sink for excess vacancies, perhaps more than it is for excess interstitials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98452
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