Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 119 (Jan. 2007), p. 299-302
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Nanocomposite materials based on poly(p-hydroxystyrene-co-2-methyl-2-adamantylmethacrylate-co-methacrylisobutyl-POSS) were synthesized and evaluated as EUV chemicallyamplified resists. Incorporation of 2-methyl-2-adamantyl and POSS groups into the matrix polymermade it possible to improve the dry-etch resistance, and excellent lithographic performance wasobtained. The well-defined 250 nm positive patterns were obtained using a KrF excimer laser scanner,and 100 nm elbow patterns using an EUV lithography tool. The dry-etch resistance of this resist for aCF4-based plasma was comparable to that of poly(p-hydroxystyrene)
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.119.299.pdf
Permalink
|
Location |
Call Number |
Expected |
Availability |