ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
pn diodes have recently been fabricated from 3C-SiC material heteroepitaxially grownatop on-axis 4H-SiC mesa substrate arrays [1,2]. Using an optical emission microscope (OEM), wehave investigated these diodes under forward bias, particularly including defective 3C-SiC filmswith in-grown stacking faults (SFs) nucleated on 4H-SiC mesas with steps from screw dislocations.Bright linear features are observed along 〈110〉 directions in electroluminescence (EL) images.These features have been further investigated using electron channeling contrast imaging (ECCI)[3]. The general characteristics of the ECCI images—together with the bright to dark contrastreversal with variations of the excitation error—strongly suggest that the bright linear features arepartial dislocations bounding triangular SFs in the 3C-SiC films. However, unlike partialdislocations in 4H-SiC diodes whose recombination-enhanced dislocation motion serves to expandSF regions, all the partial dislocations we observed during the electrical stressing were immobileacross a wide range of current injection levels (1 to 1000 A/cm2)
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.223.pdf
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