Publication Date:
2012-08-30
Description:
Author(s): B. Jenichen, J. Herfort, T. Hentschel, A. Nikulin, X. Kong, A. Trampert, and I. Žižak Co 2 FeSi/GaAs(110) and Co 2 FeSi/GaAs(111)B hybrid structures were grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and x-ray diffraction. The films contained inhomogeneous distributions of ordered L 2 1 and B 2 phases. The average stoichiometry was controlled by... [Phys. Rev. B 86, 075319] Published Wed Aug 29, 2012
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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