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  • 1
    Electronic Resource
    Electronic Resource
    Intramolecular cyclization via onium salts: a novel synthesis of 1,3-thiazolidines from chloromethyl (trimethylsilyl)methyl sulfide and nitrogen-containing heteroaromatic compounds (1987)
    s.l. : American Chemical Society
    The @journal of organic chemistry 52 (1987), S. 4423-4424 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00228a062
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  • 2
    Electronic Resource
    Electronic Resource
    Excitation of intra-4f shell luminescence of Yb3+ by energy transfer from Si nanocrystals (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3108-3110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 films containing Si nanocrystals (nc-Si) and Yb were prepared and their photoluminescence (PL) properties were studied. For the sample containing nc-Si with an average diameter of 3.1 nm, a weak peak (∼1.26 eV) attributable to the intra-4f shell transition of Yb3+ could be observed at the low-energy side of a broad peak (∼1.4 eV) of nc-Si. The intensity of the 1.26 eV peak was found to depend strongly on the size of nc-Si and increase rapidly with decreasing size. The temperature dependence of the PL spectra was studied. It was found that the degree of temperature quenching of the 1.26 eV peak depends on the size of the nc-Si and becomes small as the size decreases. These results suggest that the band-gap widening of nc-Si due to the quantum size effects is essential to efficiently excite Yb3+ by nc-Si. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122688
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence from B-doped Si nanocrystals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7953-7957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron-doped Si nanocrystals as small as 3.5 nm were prepared and their photoluminescence (PL) properties were studied. The PL properties were found to be very sensitive to the B concentration. For the sample without B doping the temperature-dependent shift of the PL peak was almost the same as that of the bulk band gap. As the B concentration increased, the temperature dependence deviated from that of the bulk band gap, and the peak exhibited a low-energy shift as the temperature decreased. The anomalous temperature dependence is considered to be due to the contribution of the PL from excitons bound to the neutral B states. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367976
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  • 4
    Electronic Resource
    Electronic Resource
    Cytological and Cytogenetical Studies on Paramecium polycaryum. V. Lethal Interactions in Certain Stocks (1964)
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 11 (1964), S. 0 
    Details
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: SYNOPSIS. Evidence is presented for killer and sensitive animals in Paramecium polycaryum. The killer animals excreted in the culture medium a lethal substance which killed the sensitive animals. The lethal substance was unstable at high temperatures and was completely precipitated by centrifugation at 10,000 rpm for 30 minutes. Comparative immunity to killing by killer animals was shown to be possessed by some animals of certain sensitive stocks.Attempts to find a cytoplasmic particle comparable to “kappa” in P. aurelia in killer animals were not successful.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1550-7408.1964.tb01733.x
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of surface oxides of gas-evaporated Si small particles with infrared spectroscopy, high-resolution electron microscopy, and x-ray photoemission spectroscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5300-5308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide layers grown on surfaces of gas-evaporated Si particles as small as 100 A(ring) have been investigated. Results of high-resolution electron microscopy and x-ray photoemission spectroscopy show that the native oxide layer (SiOx) is about 20 A(ring) thick and its chemical composition x is around 1.2. When the particles are annealed in air at 400 °C, the thickness of the oxide layers remains almost the same while the composition x increases up to 2 as the annealing time increases. The evolution of the oxide takes place during the first 15 min of annealing. Due to the increase in x, the infrared absorption band in the region of Si-O-Si stretching vibration shifts to higher frequencies and increases in intensity. A comparison of experimental infrared spectra with those calculated by an effective medium theory suggests that the observed large width of the absorption band is caused by the particle aggregation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347022
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  • 6
    Electronic Resource
    Electronic Resource
    Improvement in photoluminescence efficiency of SiO2 films containing Si nanocrystals by P doping: An electron spin resonance study (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1855-1857 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 and phosphosilicate glass (PSG) films containing Si nanocrystals (nc-Si) as small as a few nanometers were studied by electron spin resonance (ESR) and photoluminescence (PL), and the correlation between the two measurements was examined. It is shown that the incorporation of nc-Si in SiO2 results in the drastic increase in the ESR signal; the signal is assigned to the Si dangling bonds at the interfaces between nc-Si and matrices (Pb centers). The ESR signal becomes weaker by doping P into SiO2 matrices, i.e., by using PSG as matrices. By increasing the P concentration, the ESR signal decreases further. By decreasing the ESR signal, the low-energy PL peak at 0.9 eV decreases, while the band-edge PL at 1.4 eV increases. These results suggest that the 0.9 eV peak is related to Pb centers, and that the decrease in the density of the Pb centers by P doping brings about an improvement in the band-edge PL efficiency of nc-Si. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372103
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence from Si nanocrystals dispersed in phosphosilicate glass thin films: Improvement of photoluminescence efficiency (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 184-186 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) from Si nanocrystals (nc-Si) dispersed in phosphosilicate glass thin films was studied. It was found that, at room temperature, the 1.4 eV PL due to the recombination of electron-hole pairs in nc-Si becomes intense as the P concentration increases. At low temperatures, an additional peak related to defects at interfaces between nc-Si and the matrix was observed at about 0.9 eV. In contrast to the 1.4 eV peak, the 0.9 eV peak became weaker with increasing P concentration and almost disappeared at a P concentration of 1.5 mol %. These results suggest that the number of interface defects decreases with increasing P concentration and that this decrease leads to an improvement of the band-edge PL of nc-Si. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124313
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  • 8
    Electronic Resource
    Electronic Resource
    Raman scattering from quantum dots of Ge embedded in SiO2 thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2692-2694 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman measurements were carried out on Ge quantum dots from 6.1 to 15 nm in size embedded in SiO2 thin films. The samples were prepared by rf co-sputtering and post- annealing. In contrast to the amorphous-like broad spectra previously obtained for gas- evaporated Ge microcrystals of comparable sizes, relatively sharp lines around 300 cm−1 were observed, because the present dots satisfy the fixed boundary condition. The increase in the linewidth observed with decreasing the size is in good agreement with the results of the calculation based on the phonon confinement model. However, the downward shift of the line predicted from the calculation was not observed presumably due to the compressive stress exerted on the dots.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103802
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  • 9
    Electronic Resource
    Electronic Resource
    Hopping conduction in SiO2 films containing C, Si, and Ge clusters (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3749-3751 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependence of electrical characteristics of SiO2 films doped with C, Si, and Ge were studied. The conductivity σ was found to vary with the temperature as lnσ∝T−1/4 over a wide temperature range, indicative of the conduction by the variable range hopping (VRH) mechanism. Since the previous optical studies for the same films indicate the existence of clusters in the films, it is very likely that the VRH through localized states associated with clusters dominates the conduction process, irrespective of the kind of group IV elements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115994
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of Resonant Photon Tunneling in Photonic Double Barrier Structures (1999)
    Springer
    Optical review 6 (1999), S. 204-210 
    Details
    ISSN: 1349-9432
    Keywords: resonant photon tunneling ; frustrated total reflection ; surface plasmon ; guided mode ; double barrier structure
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Reflectance and transmittance of 632.8 nm He-Ne laser light for photonic double barrier structures (consisting of a SF10 prism, SiO2 layer, Al or Al2O3 active layer, SiO2 layer and SF10 prism) were measured as a function of the angle of incidence for both the ρ- and s-polarized incidence. Sharp reflection dips and transmission peaks were observed at angles larger than the critical angle of total reflection. The appearance of the transmission peaks can be attributed to resonant photon tunneling through the photonic double barrier structures analogous to resonant electron tunneling through double potential barrier structures. Resonant tunneling is mediated by the long-range surface plasmon polariton in the case of the Al active layer and the electromagnetic guided modes in the case of the Al2O3 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s10043-999-0204-3
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