Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 67-69
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The changes of the band bending and of the nonradiative (nr) surface recombination are investigated by use of photovoltage and photoluminescence techniques during the electrochemical deposition of p-nitrobenzene molecules on atomically flat and rough hydrogenated as well as on chemically oxidized Si(111) surfaces. A simple and well-reproducible procedure has been developed for electrochemical grafting of organic molecules on hydrogenated Si surfaces in aqueous electrolytes. The grafting of a monolayer of p-nitrobenzene molecules on atomically flat p-Si(111):H surfaces induces a change of the band bending of about 0.1 eV and the amount of nr surface defects, Ns, is only slightly increased by a factor of about 3 (Ns〈1011 cm−2) with respect to the hydrogenated Si surface. The role of the formation of radicals for the engineering of Si surfaces is discussed. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1430265
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