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  • 1
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    G-protein-independent coupling of MC4R to Kir7.1 in hypothalamic neurons (2015)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2015-01-21
    Description: The regulated release of anorexigenic alpha-melanocyte stimulating hormone (alpha-MSH) and orexigenic Agouti-related protein (AgRP) from discrete hypothalamic arcuate neurons onto common target sites in the central nervous system has a fundamental role in the regulation of energy homeostasis. Both peptides bind with high affinity to the melanocortin-4 receptor (MC4R); existing data show that alpha-MSH is an agonist that couples the receptor to the Galphas signalling pathway, while AgRP binds competitively to block alpha-MSH binding and blocks the constitutive activity mediated by the ligand-mimetic amino-terminal domain of the receptor. Here we show that, in mice, regulation of firing activity of neurons from the paraventricular nucleus of the hypothalamus (PVN) by alpha-MSH and AgRP can be mediated independently of Galphas signalling by ligand-induced coupling of MC4R to closure of inwardly rectifying potassium channel, Kir7.1. Furthermore, AgRP is a biased agonist that hyperpolarizes neurons by binding to MC4R and opening Kir7.1, independently of its inhibition of alpha-MSH binding. Consequently, Kir7.1 signalling appears to be central to melanocortin-mediated regulation of energy homeostasis within the PVN. Coupling of MC4R to Kir7.1 may explain unusual aspects of the control of energy homeostasis by melanocortin signalling, including the gene dosage effect of MC4R and the sustained effects of AgRP on food intake.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4383680/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4383680/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Ghamari-Langroudi, Masoud -- Digby, Gregory J -- Sebag, Julien A -- Millhauser, Glenn L -- Palomino, Rafael -- Matthews, Robert -- Gillyard, Taneisha -- Panaro, Brandon L -- Tough, Iain R -- Cox, Helen M -- Denton, Jerod S -- Cone, Roger D -- 5R01 DK082884-03/DK/NIDDK NIH HHS/ -- DK020593/DK/NIDDK NIH HHS/ -- F31 DK102343/DK/NIDDK NIH HHS/ -- P30 DK020593/DK/NIDDK NIH HHS/ -- R01 DK064265/DK/NIDDK NIH HHS/ -- R01 DK070332/DK/NIDDK NIH HHS/ -- R01DK064265/DK/NIDDK NIH HHS/ -- R01DK070332/DK/NIDDK NIH HHS/ -- R25 GM059994/GM/NIGMS NIH HHS/ -- England -- Nature. 2015 Apr 2;520(7545):94-8. doi: 10.1038/nature14051. Epub 2015 Jan 19.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Molecular Physiology &Biophysics, Vanderbilt University Medical Center, Nashville, Tennessee 37232, USA. ; Department of Chemistry &Biochemistry, University of California, Santa Cruz, California 95064, USA. ; 1] Department of Molecular Physiology &Biophysics, Vanderbilt University Medical Center, Nashville, Tennessee 37232, USA [2] Department of Pharmacology, Meharry Medical College, Nashville, Tennessee 37208, USA. ; King's College London, Wolfson Centre for Age-Related Diseases, Guy's Campus, London SE1 1UL, UK. ; 1] Department of Anesthesiology, Vanderbilt University Medical Center, Nashville, Tennessee 37232, USA [2] Department of Pharmacology, Vanderbilt University Medical Center, Nashville, Tennessee 37232, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/25600267" target="_blank"〉PubMed〈/a〉
    Keywords: Action Potentials ; Agouti-Related Protein/metabolism ; Animals ; Eating/genetics ; Energy Metabolism ; Female ; *GTP-Binding Protein alpha Subunits, Gs ; HEK293 Cells ; Homeostasis/genetics ; Humans ; Ligands ; Male ; Melanocortins/metabolism ; Mice ; Neurons/*metabolism ; Paraventricular Hypothalamic Nucleus/*cytology ; Potassium Channels, Inwardly Rectifying/*metabolism ; Receptor, Melanocortin, Type 4/genetics/*metabolism ; Signal Transduction/genetics ; alpha-MSH/metabolism
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Nature Publishing Group (NPG)
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  • 2
    Electronic Resource
    Electronic Resource
    Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 442-444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin InGaAs/InP single quantum well structures, grown by chloride transport vapor levitation epitaxy, have been investigated by low-temperature photoluminescence (PL). Well-resolved multiple peaks are observed in the PL spectra, instead of an expected single peak. We attribute this to monolayer (a0/2=2.93 A(ring)) variations in quantum well (QW) thickness. Separate peak positions for QW thicknesses corresponding to 2–6 monolayers have been determined, providing an unambiguous thickness calibration for spectral shifts due to quantum confinement. The PL peak corresponding to two monolayers occurs at 1.314 eV, corresponding to an energy shift of 524 meV. Experimental data agree very well with a simple effective mass theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100946
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of laterally propagating supersteps of InP/InGaAs on vicinal wafers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 472-474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a technique for artifically bunching the atomic steps on a vicinal substrate to form supersteps of almost arbitrary height. The process involves the etching of a grating of parallel grooves on the surface of a vicinal substrate followed by epitaxial growth that fills the grooves. Steps of height proportional to the period of the grating and the substrate misorientation angle are formed. The technique is demonstrated on a macroscopic scale for the InP/InGaAs material system using chloride transport vapor levitation epitaxy, resulting in InGaAs wire-like structures confined both horizontally and vertically by InP. The growth of quantum wires and laterally periodic superlattices should be possible using this technique with proper scaling of parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101856
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  • 4
    Electronic Resource
    Electronic Resource
    Filamentary structure and transport in corrugated InGaAs/InP superlattices grown by vapor levitation epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1222-1226 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Periodic stimulation of a growth instability on (001) vicinal surfaces of InP and InGaAs induces a corrugated growth interface. When this interface is incorporated into a superlattice the two-dimensional quantum well coalesces into a periodic structure comprised of InGaAs filaments buried in an InP matrix. We have measured the transport in this system by contactless submillimeter wave spectroscopy and show that the electron motion is confined to these filaments, and we have determined the electron density and mobility in these submicrometer filaments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343467
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of many-body effects in one-side modulation-doped InP-InGaAs heterostructure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1105-1107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A one-side modulation-doped quantum well of InGaAs lattice matched to InP has been used to investigate many-body effects in a quasi-two-dimensional (2D) electron gas. The sample was grown by vapor levitation epitaxy (VLE). Low-temperature photoluminescence (PL) measurements were carried out under different optical excitation intensities using 5145 A(ring) line from an argon ion laser. By increasing the laser intensity over five orders of magnitude a 13.2 meV blue shift in the PL line was observed to occur for a single asymmetric quantum well having a 2D electron gas density as low as 0.9×1011 cm−2. The observed blue shift is explained in terms of the reduction of both band bending (of the order of 1.8 meV) and many-body effects (of the order of 11.4 meV) due to the reduction of the 2D electron gas density in the quantum well. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115727
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  • 6
    Electronic Resource
    Electronic Resource
    Nearly ideal electronic surfaces on naked In0.53Ga0.47As quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1002-1004 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have discovered that hydroxide-coated In0.53Ga0.47Ag has the lowest known surface recombination velocity of any III-V semiconductor. To demonstrate the excellent electronic quality of such interfaces, we have measured the quantum shifts in the room-temperature luminescence spectrum of "naked'' In0.53Ga0.47As quantum wells (i.e., quantum wells with one face uncovered) in the thickness range 15–50 A(ring). These nearly ideal electronic surfaces should allow the fabrication of lateral quantum confinement structures that operate at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99226
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  • 7
    Electronic Resource
    Electronic Resource
    Role of step-flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire-like arrays (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 611-613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate a morphological instability that causes an InGaAs/InP multiquantum well structure grown on a vicinal (001) InP surface to spontaneously evolve into an array of InGaAs quasi-one-dimensional filaments buried in an InP matrix. To explain this behavior, we propose a step-flow growth model involving different lateral growth velocities for heteroepitaxy and homoepitaxy. A computer simulation based on the model agrees closely with the experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103613
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  • 8
    Electronic Resource
    Electronic Resource
    InGaAs shallow junction fabrication using Langmuir–Blodgett film diffusion source (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2132-2134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new source of cadmium diffusion in In0.53Ga0.47As has been developed. Langmuir–Blodgett (LB) deposited monolayers of cadmium arachidate have been used as a source of cadmium. The LB film has been characterized by grazing incidence infrared spectroscopy and Auger electron spectroscopy. Acceptor profiles obtained by differential Hall technique are presented. Highly doped (NA =2×1019 cm−3) shallow (xj ≈0.1–0.4 μm), p+-n junctions are obtained. Mesa-type p-i-n diodes with 125 μm diameter, ideality factor =1.3, Idark =5 nA at 20 V reverse bias, and Vbreakdown =30 V have been fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102994
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  • 9
    Electronic Resource
    Electronic Resource
    Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 867-869 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that macroscopic, as opposed to microscopic, steps can be obtained on a semiconductor vicinal surface when a perturbation has been "printed'' on it, prior to epitaxial growth. This generic crystal growth concept has been studied here with the GaAs/AlGaAs system using organometallic chemical vapor deposition. The details of step formation, stabilization, and subsequent propagation have been investigated with scanning electron microscopy. Regular, sawtooth-like growth patterns have been obtained, with periodic growth rate differences at the step edges. This novel lateral patterning technique was employed to fabricate arrays of quantum wire-like heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101624
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  • 10
    Electronic Resource
    Electronic Resource
    Selective growth of InGaAs/InP heterojunction bipolar transistors with a buried subcollector (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1193-1195 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the fabrication of an InGaAs/InP heterojunction bipolar transistor (HBT) with a reduced base-collector overlap area using selective epitaxy techniques. The process uses planarizing growth by chloride-transport vapor-phase epitaxy (VPE) to create a buried subcollector layer, followed by selective regrowth by organometallic VPE. The quality of the regrowth over the planarized substrates is evident from the dc characteristics of the HBT which show an ideality factor η=1.05 for the base-emitter junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107644
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