Publication Date:
2016-06-30
Description:
In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al 2 O 3 ) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al 2 O 3 interface and/or in the Al 2 O 3 layer.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
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