ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A graphite shear cell had been developed to measure diffusion coefficients in metal or semiconductor melts. The usable temperature range reaches from the melting point of the material to limits like chemical reaction temperatures with the graphite crucible, respectively, to the vaporization temperature of the liquid. As opposed to existing cells the improvement is in the simple initial shear to start diffusion and the "comb-shearing" process to terminate the diffusion experiment. These mechanisms minimize convection in the melt initialized by the shear movement itself. The reliability of the cell had been verified in diffusion experiments in the system In–Sn, for which microgravity data (without an additional contribution due to gravity-driven natural convection) are present. In addition the mass transport of the pure shearing process had been measured. It was found to be negligible for typical diffusion experiments with t〉10 000 s. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1148516
Permalink