ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Optical functions, phonon properties, and composition of InGaAsN single layers derived from far- and near-infrared spectroscopic ellipsometry (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5951-5958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the optical properties of compressively strained InxGa1−xAs1−yNy (x〈0.13, y〈0.03) single layers for photon energies from 0.75 to 1.3 eV (near infrared), and for wave numbers from 100 to 600 cm−1 (far infrared) using spectroscopic ellipsometry. The intentionally undoped InGaAsN layers were grown pseudomorphically on top of undoped GaAs buffer layers deposited on Te-doped (001) GaAs substrates by metalorganic vapor-phase epitaxy. We provide parametric model functions for the dielectric function spectra of InGaAsN for both spectral ranges studied here. The InGaAsN layers show a two-mode phonon behavior in the spectral range from 100 to 600 cm−1. We detect the transverse GaAs- and GaN-sublattice phonon modes at wave numbers of about 267 and 470 cm−1, respectively. The polar strength f of the GaN sublattice resonance changes with nitrogen composition y and with the biaxial strain εxx resulting from the lattice mismatch between InGaAsN and GaAs. This effect is used to derive the nitrogen and indium content of the InGaAsN layers combining the observed f dependence with results from high-resolution double-crystal x-ray diffractometry and using Vegard's law for the lattice constants and the elastic coefficients C11 and C12. The calculated nitrogen concentrations reflect growth properties such as increasing N incorporation in InGaAsN with decreasing growth temperature, with increasing concentration of nitrogen in the gas phase, and with decreasing indium concentration in InGaAsN. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416859
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4927-4938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the optical properties of tensile strained GaAs1−yNy (0%≤y≤3.7%) single layers for photon energies from 0.75 to 4.5 eV and for wave numbers from 100 to 600 cm−1 using spectroscopic ellipsometry. The intentionally undoped GaAsN layers were grown pseudomorphically on top of undoped GaAs buffer layers deposited on Te-doped (001) GaAs substrates by metalorganic vapor phase epitaxy. We provide parametric model functions for the dielectric function spectra of GaAsN for both spectral ranges studied here. The model functions for photon energies from 0.75 to 4.5 eV excellently match dielectric function data obtained from a numerical wavelength-by-wavelength inversion of the experimental data (point-by-point fit). Critical-point analysis of the point-by-point fitted dielectric function is performed in the spectral regions of the fundamental band gap and the critical-point transitions E1 and E1+Δ1. The band-gap energy is redshifted whereas the E1 and E1+Δ1 transition energies are blueshifted with increasing y. For y≤1.65% the observed blueshift of the E1 energy is well explained by the sum of the effects of biaxial (001) strain and alloying. The GaAsN layers show a two-mode phonon behavior in the spectral range from 100 to 600 cm−1. We detect the transverse GaAs- and GaN-sublattice phonon modes at wave numbers of about 267 and 470 cm−1, respectively. The oscillator strength of the GaN-sublattice resonance increases linearly due to alloying and tensile strain. We compare our results from the single layers with those obtained previously from tensile and compressively strained GaAsN/GaAs and GaAsN/InAs/GaAs superlattices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359422
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Optical constants of GaxIn1−xP lattice matched to GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3416-3419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical constants of Ga0.51In0.49P have been determined from 0.8 to 5.0 eV using variable-angle spectroscopic ellipsometry measurements at room temperature. The metal-organic vapor-phase-epitaxy-grown samples were x-ray analyzed to confirm lattice matching to the GaAs substrate. The effects of the native oxide were numerically removed from the data to determine the intrinsic optical constants. This is important because the optical constants reported become generally useful for modeling multiple-layer structures. A Kramers–Kronig analysis was used to reduce interference-related fluctuations in the below-gap refractive index. Near the band edge a mathematical form for excitonic absorption was included. Critical point energies were extracted using a numerical second-derivative fitting algorithm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358632
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Optical investigations on isovalent δ layers in III-V semiconductor compounds (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6295-6299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In contrast to usual quantum wells or barriers having a thickness of some lattice constants, spatially well-separated, electronically uncoupled monolayers of group-III or V elements are considered as isovalent δ doping or δ layers. Similar to the case of randomly distributed nitrogen dopants in GaP bulk material, it is shown that the two-dimensional arrangement of isovalent atoms brings forth a new quality of III-V semiconductor compounds: The optical emission and absorption properties near the fundamental band gap of indirect-gap, and even of direct-gap, host material, where the isovalent layers are incorporated, are drastically improved. Low-temperature luminescence and transmission experiments on metal-organic vapor-phase epitaxially grown InAs δ layers in GaAs, AlAs δ layers in GaAs, and GaAs monolayers in AlAs are dealt with. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359097
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Phonon modes of GaNyP1−y (0.006≤y≤0.0285) measured by midinfrared spectroscopic ellipsometry (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3407-3409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Midinfrared spectroscopic ellipsometry reveals the two-phonon mode behavior of GaNyP1−y for nitrogen compositions 0.006≤y≤0.0285. The single layers (∼350 nm) studied were grown by metalorganic vapor-phase epitaxy on GaP substrates with orientations (001), and (001) with 5° off toward [110]. Line-shape analysis of the midinfrared response allows determination of the transverse- and longitudinal-optical phonon frequencies of the GaP- and GaN-like phonon modes. The polar strength of the GaN lattice resonance increases linearly with y, which can be used to monitor the nitrogen content of GaNyP1−y. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419050
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1650-1652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the nitrogen concentrations on the E1 and E1+Δ1 transitions of tensile-strained GaAs1−yNy (0.1%≤y≤3.7%) grown pseudomorphically to GaAs by metalorganic vapor-phase epitaxy are studied by spectroscopic ellipsometry. Adachi's critical-point composite model is employed for ellipsometry data analysis. Contrary to the well-known redshift of the band-gap energy E0, we observe linearly blueshifted E1 and E1+Δ1 transition energies with increasing nitrogen composition y. For nitrogen compositions of 0≤y≤1.65%, the observed blueshift of the E1 energy is well explained by the sum of the effects of biaxial (001) strain and alloying. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1309021
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial deposition of GaP on GaAs
    Amsterdam : Elsevier
    Journal of Crystal Growth 44 (1978), S. 157-162 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(78)90189-6
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of heavily doped n-InP
    Amsterdam : Elsevier
    Solid State Communications 58 (1986), S. 485-491 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(86)90039-6
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Room temperature polarization bistability in 1.3 μm InGaAsP/InP ridge waveguide lasers
    Amsterdam : Elsevier
    Optics Communications 80 (1991), S. 259-261 
    Details
    ISSN: 0030-4018
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0030-4018(91)90262-C
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Extreme asymmetric X-ray Bragg reflection of semiconductor heterostructures near the edge of total external reflection (1990)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 23 (1990), S. 228-233 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Synchrotron radiation has been used to measure the rocking curves from a (GaIn)(AsP) single layer grown on an InP (100)-oriented substrate. For angles of incidence ΦB = (ΘB − φ) ≤ 0.7° measured at the Bragg angle ΘB (φ is the angle between the diffracting lattice plane and the surface), the rocking curve (RC) is very strongly influenced by total external reflection (TER). This causes a decrease in the full width at half-maximum (FWHM) and an asymmetrical shape for the RC for small ΦB. Both of these effects are due to the Bragg-angle shift from the actual incident angle Φ which is not considered in the conventional dynamical theory. In this paper the essential influence of TER on any thin-layer rocking curve is investigated using a numerical solution of the extended dynamical theory. The pattern can be interpreted up to ΦB ≥ ΘC (ΘC is the angle of TER) by semiempirical incorporation of the results of the extended theory with the coupling formalism of Barrels, Hornstra & Lobeek [Acta Cryst. (1986). A42, 539–545].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889890001704
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...