Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 556-560
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have characterized the structure of superlattices (SL's) based on amorphous silicon by optical interference microscopy and secondary electron micrographs. Differences in the etch rate of a-Si:H and a-SiNx:H in CP6 create a series of terraces and steps in a-Si:H/a-SiNx:H superlattices that show up clearly in interference contrast micrographs and allow an assessment of the quality of the SL. Secondary electron microscopy images of doping superlattices (npnp or nini) of a-Si:H reveal after plasma etching the layered nature of the samples. The necessary contrast is provided by differences in the etch rate of the two interfaces (i.e., n→p vs p→n). Evidence for structural differences of the interfaces of nini multilayers stems from secondary ion mass spectrometry and 15N depth profiles of hydrogen that show an extra amount of H of the order of 1015 cm−2 only at that interface where intrinsic a-Si:H is growing on top of the n-type material. We explain these results in terms of a growth model which entails a hydrogen enrichment over its bulk concentration that is not limited to the surface but extends into a subsurface region during the film deposition.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338258
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