Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 619-621
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Resistless microfabrication of the metallization of n-type GaAs formed by projection-patterned doping using a KrF excimer laser is described. Silane (SiH4 ) gas is used as a source material of the n-type dopant of Si. Copper thin films with a linewidth as narrow as 3.4 μm are deposited selectively on the doped region by electroplating using a CuSO4 aqueous solution. Using the selective metallization process, nonalloyed ohmic contacts can be formed with a specific contact resistance of 2.32×10−5 Ω cm2, which is one-thirtieth of that of the conventional alloyed contacts.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101828
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